Grain size and electrical resistivity measurements on aluminum polycrystalline thin films

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.

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Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

Journal of Applied Physics ◽

10.1063/1.4807899 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214904 ◽

Cited By ~ 7

Author(s):

Mikhail Treger ◽

Christian Witt ◽

Cyril Cabral ◽

Conal Murray ◽

Jean Jordan-Sweet ◽

...

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Room Temperature ◽

X Ray Diffraction ◽

X Ray ◽

Resistivity Measurements ◽

Recrystallization Kinetics ◽

Electroplated Copper

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Four point mercury contact probe for electrical resistivity measurements of thin films

Microelectronics Reliability ◽

10.1016/0026-2714(69)90098-5 ◽

1969 ◽

Vol 8 (3) ◽

pp. 262

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Resistivity Measurements ◽

Contact Probe

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Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Materials Science-Poland ◽

10.1515/msp-2017-0022 ◽

2017 ◽

Vol 35 (1) ◽

pp. 173-180 ◽

Cited By ~ 2

Author(s):

A. Kavitha ◽

R. Kannan ◽

S. Rajashabala

Keyword(s):

Thin Films ◽

Grain Size ◽

Electrical Resistivity ◽

Magnetron Sputtering ◽

Physical Properties ◽

Dc Magnetron Sputtering ◽

Target Power ◽

Reactive Gases ◽

Hot Filament ◽

Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

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Deposition of polycrystalline thin films with controlled grain size

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/38/3/022 ◽

2005 ◽

Vol 38 (3) ◽

pp. 490-496 ◽

Cited By ~ 55

Author(s):

M Vopsaroiu ◽

G Vallejo Fernandez ◽

M J Thwaites ◽

J Anguita ◽

P J Grundy ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Polycrystalline Thin Films

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Cu and Dilute Binary Cu(Ti), Cu(Sn) and Cu(Al) Thin Films: Texture, Grain Growth and Resistivity

MRS Proceedings ◽

10.1557/proc-721-j3.2 ◽

2002 ◽

Vol 721 ◽

Cited By ~ 2

Author(s):

A. Gungor ◽

K. Barmak ◽

A. D. Rollett ◽

C. Cabral ◽

J. M. E. Harper

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Grain Size ◽

Electrical Resistivity ◽

Fiber Texture ◽

Al Alloy ◽

Alloy Films ◽

Transmission Electron ◽

Pure Cu

AbstractAnnealing Cu and dilute Cu(Ti), Cu(Sn) and Cu(Al) alloy films resulted in the strengthening of film texture, with the strongest <111> fiber texture being found for Cu(Ti). Annealing also resulted in a decrease of electrical resistivity and the growth of grains, with the largest grain size and lowest resistivity being seen for pure Cu itself. Among the alloy films, the lowest resistivity was found for Cu(Ti) and the largest grain size for Cu(Al). Electron beam evaporated films with compositions in the range of 2.0-3.0 at% and thicknesses in the range of 420-540 nm were annealed at 400°C for 5 hours. Four point probe resistance measurement, xray diffraction and transmission electron microscopy were used to follow the changes in film resistivity, texture and grain size.

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