Highly Transparent and Conductive CdO Thin Films as Anodes for Organic Light-Emitting Diodes

2005 ◽  
Vol 871 ◽  
Author(s):  
Yu Yang ◽  
Qinglan Huang ◽  
Andrew W. Metz ◽  
Shu Jin ◽  
Jun Ni ◽  
...  

AbstractIn this paper, CdO thin films are used for the first time as transparent anodes for organic light-emitting diodes (OLEDs). Highly conductive and transparent CdO thin films have been grown on glass and on single-crystal MgO(100) by low pressure metal-organic chemical vapor deposition (MOCVD) at 400°C, and were implemented in small-molecule OLED fabrication. Device response and applications potential have been investigated and compared with those of commercial ITO-based control devices. It is found that as-deposited CdO thin films are capable of injecting holes into such devices, rendering them promising anode materials for OLEDs. A maximum luminance of 32,000 cd/m2 and an external forward quantum efficiency of 1.4 %, with a turn-on voltage of 3.2 V are achieved on MgO(100)/CdO-based devices.

Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...


2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.


2009 ◽  
Vol 94 (22) ◽  
pp. 222105 ◽  
Author(s):  
William E. Fenwick ◽  
Andrew Melton ◽  
Tianming Xu ◽  
Nola Li ◽  
Christopher Summers ◽  
...  

2005 ◽  
Vol 87 (8) ◽  
pp. 083504 ◽  
Author(s):  
X. L. Zhu ◽  
J. X. Sun ◽  
H. J. Peng ◽  
Z. G. Meng ◽  
M. Wong ◽  
...  

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