Ferroelectric Ceramics for Dielectric Electromechanical and Pyroelectric Applications

MRS Bulletin ◽  
1987 ◽  
Vol 12 (7) ◽  
pp. 47-53
Author(s):  
Walter A. Schulze ◽  
Turuvekere R. Gururaja

The growth of integrated circuit applications has been a strong influence in the expansion of markets for ferroelectric ceramics. Ferroelectrics perform three major functions in circuits:1. They store energy with a high volume efficiency,2. They have very useful large changes in impedance with frequency, and3. They transduce between various energy forms and electrical signals.For many years commercial ferroelectric ceramics have been dominated by the barium titanate and lead zirconate titanate (PZT) systems. A tremendous research effort has been dedicated to these systems with very interesting studies still progressing on basic understanding, reproducibility, and modifications to utilize inexpensive electrodes. Processing studies are also seeking to reduce the size of devices and develop new transducing and sensing applications. The need to reduce cost and to fulfill specific applications is creating demands for new materials. Much of this effort has centered on lead-based systems referred to as relaxor ferroelectrics.The areas of application of ferroelectrics are narrowed in this review by eliminating the interfacial (grain-grain boundary) devices and electro-optic applications discussed in “Electronic Ceramic Thin Films” by Bruce Tuttle in this issue. Also, this article can only cover a small fraction of the information indicated by the title.

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.


2011 ◽  
Vol 110 (3) ◽  
pp. 033106 ◽  
Author(s):  
Ye Wu ◽  
Hua Zhao ◽  
Yingyin K. Zou ◽  
Xuesheng Chen ◽  
Baldassare Di Bartolo ◽  
...  

2013 ◽  
Vol 113 (4) ◽  
pp. 044104 ◽  
Author(s):  
A. Peláiz-Barranco ◽  
A. C. Garcia-Wong ◽  
Y. González-Abreu ◽  
J. D. S. Guerra

1992 ◽  
Vol 271 ◽  
Author(s):  
S. D. Ramamurthi ◽  
S. L. Swartz ◽  
K. R. Marken ◽  
J. R. Busch ◽  
V. E. Wood Battelle

ABSTRACTLead-zirconate-titanate, Pb(Zr0.53Ti0.47)O3, films were produced by the sol-gel method from alkoxide and acetate precursors in a 2-methoxyethanol solvent system. The PZT films were deposited on platinized silicon and single-crystal SrTiO3 substrates for electrical and optical characterization, respectively. The processing parameters, especially excess PbO content and annealing conditions, were shown to have a significant effects on the properties of PZT films. Epitaxial PZT films deposited on SrTiO3 waveguided over 10 mm distances with propagation losses as low as 5.9 dB/cm at 783 nm and a linear electro-optic effect was also demonstrated.


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