Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
1999 ◽
Vol 4
(S1)
◽
pp. 403-404
Keyword(s):
Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.
2008 ◽
Vol 23
(11)
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pp. 2990-2995
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1957 ◽
Vol 240
(1223)
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pp. 524-538
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1988 ◽
Vol 33
(1-4)
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pp. 603-606
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1992 ◽
Vol 65
(6)
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pp. 1383-1394
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2008 ◽
Vol 600-603
◽
pp. 67-70
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2008 ◽
Vol 41-42
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pp. 15-19
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