Morphology of Si nanocrystallites embedded in SiO2 matrix

2008 ◽  
Vol 23 (11) ◽  
pp. 2990-2995 ◽  
Author(s):  
V.S. Teodorescu ◽  
M.L. Ciurea ◽  
V. Iancu ◽  
M-G. Blanchin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Quartz Substrate ◽  
Stacking Faults ◽  
Film Properties ◽  
Sio2 Matrix ◽  
Transmission Electron ◽  
High Concentrations ◽  
Si Nanocrystallites

The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

scholarly journals Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium

1998 ◽  
Vol 537 ◽  
Author(s):  
W. R. Wampler ◽  
S. M. Myers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Nitride ◽  
Basal Plane ◽  
Large Fraction ◽  
Stacking Faults ◽  
Ion Channeling ◽  
Transmission Electron ◽  
High Concentrations

AbstractIon channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

2016 ◽  
Vol 858 ◽  
pp. 105-108 ◽  
Author(s):  
Yu Yang ◽  
Jian Qiu Guo ◽  
Ouloide Goue ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Temperatures ◽  
Formation Mechanism ◽  
Stacking Faults ◽  
Generation Process ◽  
X Ray ◽  
Transmission Electron

Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than perfect 4H–SiC crystal at the high temperatures (>1000 °C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults, and experimentally verified it by characterizing the configuration of the bounding partials of the stacking faults on both surfaces. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.

scholarly journals High Resolution Tem Studies of Defects Near Si-SiO2 Interface

1983 ◽  
Vol 31 ◽  
Author(s):  
J. H. Mazur ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Boron Doped ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
One Step ◽  
P Type

ABSTRACTSmall defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

2014 ◽  
Vol 778-780 ◽  
pp. 394-397 ◽  
Author(s):  
Yun Ji Shin ◽  
Soo In Kim ◽  
Hyeon Jin Jung ◽  
Chang Woo Lee ◽  
Wook Bahng
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Crystallographic Structure ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

Imaging of Defects in Cadmium Telluride using High Resolution Transmission Electron Microscopy

1980 ◽  
Vol 2 ◽  
Author(s):  
F. A. Ponce ◽  
T. Yamashita ◽  
R. H. Bube ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cadmium Telluride ◽  
Defect Structure ◽  
Stacking Faults ◽  
Image Contrast ◽  
Transmission Electron

ABSTRACTThe defect structure of cadmium telluride has been investigated using high resolution transmission electron microscopy. The variation of the TEM images with the defocus value is discussed, and defect symmetry considerations are used to correlate the image contrast characteristics with the lattice struc ture. Experimental micrographs of stacking faults and dislocations in the structure are analyzed.

Process-Induced Deformations and Stacking Faults in 4H-SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Robert S Okojie ◽  
Xianrong Huang ◽  
Michael Dudley ◽  
Ming Zhang ◽  
Pirouz Pirouz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Resolution ◽  
Stress Measurement ◽  
Stacking Faults ◽  
Film Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

AbstractWe used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

Sign in / Sign up

Export Citation Format

Share Document