scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

CrystEngComm ◽  
2012 ◽  
Vol 14 (14) ◽  
pp. 4728 ◽  
Author(s):  
Hao Long ◽  
Yang Wei ◽  
Tongjun Yu ◽  
Zhe Wang ◽  
Chuanyu Jia ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Organic Vapor ◽  
Metal Organic

Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy Grown ZnO Layer as a Substrate

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L657-L659 ◽  
Author(s):  
Ken-ichi Ogata ◽  
Toru Kawanishi ◽  
Keigou Maejima ◽  
Keiichiro Sakurai ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Time-resolved photoluminescence of the defect lines in GaAs molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 838-841
Author(s):  
S. Charbonneau ◽  
M. L. W. Thewalt ◽  
T. Steiner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Region ◽  
Molecular Beam ◽  
Resonant Excitation ◽  
High Quality ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Recombination Processes ◽  
Time Resolved Photoluminescence ◽  
Exciton Transitions

A time-resolved photoluminescence study of the defect-induced bound excitons (DIBE) observed in the energy region 1504–1511 meV in high quality molecular-beam epitaxy grown GaAs has been performed. Our results support the model that these lines consist of two distinct recombination processes. Transient resonant excitation of these DIBE demonstrate that the lines i to s can be associated with acceptor – bound exciton transitions.

Formation of GaN Nanocrystal on Si and Its Photoelectrochemical Application

2008 ◽  
Vol 1127 ◽  
Author(s):  
Katsushi Fujii ◽  
Takashi Kato ◽  
Keiichi Sato ◽  
In-Ho Im ◽  
Ji-Ho Chang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Current Density ◽  
Light Absorption ◽  
Molecular Beam ◽  
Layer Structure ◽  
Photocurrent Density ◽  
Photoelectrochemical Performance ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTGaN nanodots and nanorods were successfully grown on Si (111) substrates by molecular beam epitaxy. Photocurrent densities of GaN nanodots were quite small compared with thick GaN layer grown by metal-organic vapor phase epitaxy. The current density, however, increases with GaN nanodot density. The highest photocurrent density of the GaN nanodots was higher than that of the layer structure with similar thickness (up to 10 nm) to the nanodot height. GaN nanorods have much higher photocurrent density than that of GaN nanodots. Enough nanostructure size for light absorption is important to achieve good photoelectrochemical performance.

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