scholarly journals Investigation of transport behavior in borospherene-based molecular wire for rectification applications

2021 ◽  
Author(s):  
Rajan Vohra ◽  
Harleen Kaur ◽  
Jupinder Kaur ◽  
Ravinder Kumar
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Molecular Wires ◽  
Molecular Wire ◽  
Rectification Ratio ◽  
Linear Behavior ◽  
Voltage Curve ◽  
Non Linear ◽  
Current Voltage Curve

AbstractThe transport properties of molecular wire comprising of B40 fullerene are investigated by employing density functional theory (DFT) and non-equilibrium green’s function (NEGF) methodology. The quantum transport is evaluated by calculating the density of states, transmission spectra at various bias voltages, molecular energy spectra, HOMO-LUMO gap, current–voltage curve, and transmission pathways. In context to its properties, results show that by increasing the length of molecular wire, the device exhibits rectification ratio and prominent NDR behavior. I–V curve scrutinizes that as the length of wire is increased the curve becomes non-linear. This non-linear behavior is more prominent in the case when the length of wire is increased up to six fullerene cages significant rectification ratio (R.R) and negative differential resistance (NDR) comes into the picture. The excellent negative differential resistance ensures that a device with at least six molecular wires can be used as a tunnel diode. Graphic abstract

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi4Ti3O12 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 88-90
Author(s):  
Y.H. Cai ◽  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
W.K. An ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Bi3.25Dy0.75Ti3O12 (BDT) and Bi3.25Gd0.75Ti3O12 (BGT) ceramics were investigated. The current-voltage curve of the BGT sample exhibits a negative differential resistance behavior, whereas that of the BDT sample exhibits a simple ohmic behavior. The impedance spectrum of the BDT and BGT samples indicate that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Both BDT and BGT samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Pr6O11-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1313-1316
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 314-317
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 149-151
Author(s):  
X.B. Liu ◽  
Y.H. Sun ◽  
Min Chen ◽  
Chong Qing Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates (Bi3.25Gd0.75Ti3O12, BGT) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of the BGT ceramic exhibits a negative differential resistance behavior. The impedance spectrum indicates that the sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 (BIT) and the distribution of every element is uniform. The BGT sample exhibits randomly oriented and plate-like morphology.

Effect of length and negative differential resistance behavior in conjugated molecular wire tetrathiafulvalene devices

2015 ◽  
Vol 29 (20) ◽  
pp. 1550106 ◽  
Author(s):  
Xiaojiao Zhang ◽  
Keqiu Chen ◽  
Mengqiu Long ◽  
Jun He ◽  
Yongli Gao
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Molecular Devices ◽  
Molecular Wire ◽  
Length Effect ◽  
Functional Theory ◽  
Current Voltage ◽  
The Density Functional Theory

The electronic transport properties of molecular devices constructed by conjugated molecular wire tetrathiafulvalene (TTF) have been studied by applying nonequilibrium Green’s functions in combination with the density-functional theory. Two molecular junctions with different wire lengths have been considered. The results show that the current–voltage curves of TTF devices can be modulated by the length of the molecular wire and negative differential resistance behaviors are observed in these systems. The mechanisms have been proposed for the length effect and negative differential resistance behavior.

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Molecular Devices ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

An Ab Initio Study on Negative Differential Resistance in Pyrrole Trimer Molecular Device

2010 ◽  
Vol 152-153 ◽  
pp. 931-934
Author(s):  
Cai Juan Xia ◽  
Han Chen Liu ◽  
Qiu Ping Wang
Keyword(s):  
Electronic Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Resonance Peak ◽  
Molecular Device ◽  
Transmission Resonance ◽  
Functional Theory ◽  
Theoretical Results

The electronic transport properties of pyrrole trimer sandwiched between two electrodes are investigated by using nonequilibrium Green’s function formalism combined first-principles density functional theory. Theoretical results show that the system manifests negative differential resistance (NDR) behavior. A detailed analysis of the origin of negative differential resistance has been given by observing the shift in transmission resonance peak across the bias window with varying bias voltage.

scholarly journals Electrical characteristics of silicon differential photoreceivers

2021 ◽  
Vol 2052 (1) ◽  
pp. 012014
Author(s):  
V V Gavrushko ◽  
A S Ionov ◽  
O R Kadriev ◽  
V A Lastkin
Keyword(s):  
Differential Resistance ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Similar Shape ◽  
Voltage Curve ◽  
Current Voltage ◽  
Reverse Branch ◽  
Current Voltage Curve ◽  
Surface Leakage ◽  
Additional Channel

Abstract The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

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