Wafer-area selective emitters based on optical interference

MRS Advances ◽  
2021 ◽  
Author(s):  
Minsu Oh ◽  
Thomas E. Vandervelde
2014 ◽  
Vol 8 (4) ◽  
pp. 231-241 ◽  
Author(s):  
Peter Lehmann ◽  
Jan Niehues ◽  
Stanislav Tereschenko

1973 ◽  
Vol 20 (12) ◽  
pp. 925-937 ◽  
Author(s):  
J.A. Dobrowolski ◽  
K.M. Baird ◽  
P.D. Carman ◽  
A. Waldorf
Keyword(s):  

2014 ◽  
Vol 494-495 ◽  
pp. 1274-1277
Author(s):  
Kan Liu ◽  
Hao You

This article introduces a measurement system based on LabVIEW used for optical interference fringe on micro-fluidic chips. This system mainly uses cameras to capture real-time images of wedge interference fringe on micro-fluidic chips, then the collected images will be binarized by LabVIEW. The processed images will be divided by zone , determine the flatness and gap thickness of the micro-fluidic chips by interference fringes with different directions of deflection and numbers. Finally, feedback from measured data will be used to adjust the flatness and gap thickness of micro-fluidic chips in order to meet the requirement of tests.


2006 ◽  
Vol 88 (24) ◽  
pp. 243508 ◽  
Author(s):  
Xuemin Lu ◽  
Fuk Kay Lee ◽  
Ping Sheng ◽  
H. S. Kwok ◽  
V. Chigrinov ◽  
...  

2007 ◽  
Vol 136 (1-2) ◽  
pp. 35-37 ◽  
Author(s):  
Zenon Woźniak ◽  
Michał S. Kaczmarek ◽  
Zdzisław Błaszczak

Author(s):  
Keiya Fujimoto ◽  
Hiroaki Hanafusa ◽  
Takuma Sato ◽  
Seiichiro HIGASHI

Abstract We have developed optical-interference contactless thermometry (OICT) imaging technique to visualize three-dimensional transient temperature distribution in 4H-SiC Schottky barrier diode (SBD) under operation. When a 1 ms forward pulse bias was applied, clear variation of optical interference fringes induced by self-heating and cooling were observed. Thermal diffusion and optical analysis revealed three-dimensional temperature distribution with high spatial (≤ 10 μm) and temporal (≤ 100 μs) resolutions. A hot spot that signals breakdown of the SBD was successfully captured as an anormal interference, which indicated a local heating to a temperature as high as 805 K at the time of failure.


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