Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry (OICT) imaging
Abstract We have developed optical-interference contactless thermometry (OICT) imaging technique to visualize three-dimensional transient temperature distribution in 4H-SiC Schottky barrier diode (SBD) under operation. When a 1 ms forward pulse bias was applied, clear variation of optical interference fringes induced by self-heating and cooling were observed. Thermal diffusion and optical analysis revealed three-dimensional temperature distribution with high spatial (≤ 10 μm) and temporal (≤ 100 μs) resolutions. A hot spot that signals breakdown of the SBD was successfully captured as an anormal interference, which indicated a local heating to a temperature as high as 805 K at the time of failure.