scholarly journals ANALYTICAL COMPARATIVE STUDY OF EFFICIENCIES AMONG MONO-CRYSTALLINE, POLY -CRYSTALLINE AND THIN FILM (CDTE, CIGS) SOLAR CELL USING FILL FACTOR CALCULATION METHOD

2015 ◽  
Vol 04 (04) ◽  
pp. 191-193
Author(s):  
Ruhan Mahmud Shams .
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...


Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.


2015 ◽  
Vol 137 (6) ◽  
Author(s):  
M. Doriani ◽  
H. Dehdashti Jahromi ◽  
M. H. Sheikhi

A new structure for CuIn1−xGaxSe2 (CIGS) solar cell is investigated. The structure consists of an absorber layer with constant bandgap placed next to the cadmium sulfide (CdS) buffer layer and a graded bandgap absorber layer positioned near the molybdenum (Mo) back contact. This leads to a reduced recombination rate at the back contact and enhances collection of generated carriers by additional induced drift field. The structure provides higher efficiency than previous structures. Optimum value of bandgap, thickness, and doping level of the layers are determined to reach maximum efficiency. Moreover, a trap density model is interpolated and applied in the simulations.


2020 ◽  
Author(s):  
Meah Imtiaz Zulkarnain ◽  
Nazmul Islam

Abstract In this research, a numerical simulation and analysis of the second generation thin film solar cell Copper Indium Gallium diselenide, Cu(In,Ga)Se2 or, CIGS, is conducted in order to optimize its performance and compare among the cells using different materials for buffer and window layers. The one-dimensional solar cell simulation program SCAPS-1D (Solar Cell Capacitance Simulator) is used for the simulation and analysis purpose. The effects of variation of bandgap, concentration and thickness of the p-type CIGS absorber layer on the efficiency of CIGS solar cell are investigated. The change in CIGS solar cell efficiency with change in temperature is studied, too. Two different buffer layers namely CdS and In2S3 are considered for the simulation of the CIGS solar cell. The thickness of the buffer layer, its bandgap and concentration are taken into consideration for optimization. As for the window layer, ZnO and SnO2 are employed for the numerical simulation. The thickness of the window layer is varied and its effect on the efficiency of the solar cell is investigated. The open-circuit voltage, short-circuit current density, fill factor and quantum efficiency of the CIGS solar cell are observed from the SCAPS simulation besides the solar cell efficiency. A comparison among the different CIGS cell structures employing different buffer layers and window layers is performed in terms of efficiency and other essential parameters as mentioned above. The solar cell performances of the structures explored in this work were also put in comparison against some laboratory research cell output. The simulation result shows a possible better performance for all the simulated CIGS cell structures compared to the experimental results. In2S3 appears to increase efficiency and thus poses a great potential for non-toxic CIGS solar cell. Though CIGS absorber layer requires more thickness for desired output, successful application of much thinner SnO2 replacing ZnO buffer layer paves the way to less thicker CIGS thin film solar cell.


2013 ◽  
Vol 712-715 ◽  
pp. 309-312 ◽  
Author(s):  
Ming Kun Xu

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.


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