Low-Power Fifth-Order Butterworth OTA-C Low-Pass Filter with an Impedance Scaler for Portable ECG Applications

In this paper, a [Formula: see text]-[Formula: see text] low-pass and low power filter with tunable in-band attenuation for WiMAX/LTE receiver is presented. The fourth-order filter consists of two cascaded biquad stages. The source-follower (SF) stage is used as a key building block in these biquads. In this paper, we have presented a circuit technique to reduce the nonlinearity of the SF stage resulting from unmatched signal swings at the gate and source terminals of the input transistor. The proposed SF stage, is used for design of a linear biquad which is then utilized in a fourth-order Butterworth low-pass filter. The simulation results of the filter for bandwidth of 10 MHz show that the IIP3 of the filter is equal to 8.22[Formula: see text]dBm, in-band noise density is 100[Formula: see text]nV/[Formula: see text]Hz and power consumption is 5.9[Formula: see text]mW. The supply voltage of the filter is equal to 1[Formula: see text]V.

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A low power 8th order elliptic low-pass filter for a CMMB tuner

Journal of Semiconductors ◽

10.1088/1674-4926/32/9/095002 ◽

2011 ◽

Vol 32 (9) ◽

pp. 095002 ◽

Cited By ~ 3

Author(s):

Zheng Gong ◽

Bei Chen ◽

Xueqing Hu ◽

Yin Shi ◽

Fa Foster Dai

Keyword(s):

Low Power ◽

Pass Filter ◽

Low Pass Filter ◽

Low Pass

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METHOD FOR MEASURING THE EQUIVALENT PARAMETERS OF INDUCTORS AS PART OF LOW-PASS FILTERS

RADIO COMMUNICATION TECHNOLOGY ◽

10.33286/2075-8693-2020-46-19-29 ◽

2020 ◽

pp. 19-29

Author(s):

A. G. Zinovev ◽

I. A. Shestakov

Keyword(s):

The Self ◽

Network Analyzer ◽

Q Factor ◽

Practical Application ◽

Pass Filter ◽

Low Pass Filter ◽

Loss Resistance ◽

Low Pass ◽

Low Pass Filters ◽

Fifth Order

A method for measuring the self-capacitance, inductance, loss resistance, and Q-factor of inductors as part of an LC low-pass filter at its operating frequency is presented. An example of the practical application of this method for measuring the equivalent pa-rameters of inductors and capacitors as part of a fifth-order Cauer low-pass filter using network analyzer.

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Ultra Low-Power Low-Pass Filter Design for Wearable Biomedical Applications

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455815 ◽

2021 ◽

Author(s):

Diksha Thakur ◽

Kulbhushan Sharma ◽

Rajnish Sharma

Keyword(s):

Low Power ◽

Biomedical Applications ◽

Filter Design ◽

Pass Filter ◽

Low Pass Filter ◽

Ultra Low Power ◽

Low Pass

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A 0.5-V Ultra-Low-Power Low-Pass Filter with a Bulk-Feedback Technique

2019 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas.2019.8702588 ◽

2019 ◽

Cited By ~ 1

Author(s):

Zexue Liu ◽

Zhengkun Shen ◽

Yi Tan ◽

Haoyun Jiang ◽

Heyi Li ◽

...

Keyword(s):

Low Power ◽

Pass Filter ◽

Low Pass Filter ◽

Ultra Low Power ◽

Low Pass

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Floating Active Inductor Based Trans-Impedance Amplifier in 0.18 μm CMOS Technology for Optical Applications

Electronics ◽

10.3390/electronics8121547 ◽

2019 ◽

Vol 8 (12) ◽

pp. 1547

Author(s):

Xiangyu Chen ◽

Yasuhiro Takahashi

Keyword(s):

Power Dissipation ◽

Supply Voltage ◽

Cmos Technology ◽

Pass Filter ◽

Low Pass Filter ◽

Chip Area ◽

Active Inductors ◽

Low Pass ◽

Optical Applications ◽

Fifth Order

In this paper, a transimpedance amplifier (TIA) based on floating active inductors (FAI) is presented. Compared with conventional TIAs, the proposed TIA has the advantages of a wider bandwidth, lower power dissipation, and smaller chip area. The schematics and characteristics of the FAI circuit are explained. Moreover, the proposed TIA employs the combination of capacitive degeneration, the broadband matching network, and the regulated cascode input stage to enhance the bandwidth and gain. This turns the TIA design into a fifth-order low pass filter with Butterworth response. The TIA is implemented using 0.18 μ m Rohm CMOS technology and consumes only 10.7 mW with a supply voltage of 1.8 V. When used with a 150 fF photodiode capacitance, it exhibits the following characteristics: gain of 41 dB Ω and −3 dB frequency of 10 GHz. This TIA occupies an area of 180 μ m × 118 μ m.

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