scholarly journals Small Signal Parameter Extraction and DCSimulation of Asymmetric Dual Channel AlGaN/GaN Heterojunction Field Effect Transistor

2017 ◽  
Vol 10 (16) ◽  
pp. 1-12
Author(s):  
Rahis Kumar Yadav ◽  
Pankaj Pathak ◽  
R. M. Mehra ◽  
◽  
◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Parameter Extraction ◽  
Small Signal ◽  
Signal Parameter ◽  
Dual Channel ◽  
Effect Transistor

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

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