Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

<span lang="EN-US">The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.</span>

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Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.21678 ◽

2019 ◽

Vol 29 (6) ◽

pp. e21678

Author(s):

Yung Hun Jung ◽

In Man Kang ◽

Seongjae Cho

Keyword(s):

Equivalent Circuit ◽

Field Effect ◽

Field Effect Transistor ◽

Small Signal ◽

Double Gate ◽

Effect Transistor ◽

Gate Tunneling

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Using Miller’s Theorem and Dominant Poles to Accurately Determine Field Effect Transistor and Bipolar Junction Transistor Small Signal and SPICE Capacitor Values

10.18260/1-2--22711 ◽

2020 ◽

Author(s):

Ernest Kim ◽

Thomas Schubert

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Small Signal ◽

Bipolar Junction Transistor ◽

Junction Transistor ◽

Effect Transistor

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Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

10.21203/rs.3.rs-1031896/v1 ◽

2021 ◽

Author(s):

Shaiful Bakhtiar Hashim ◽

Zurita Zulkifli ◽

Sukreen Hana Herman

Keyword(s):

Equivalent Circuit ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensor ◽

Spice Simulation ◽

Discrete Component ◽

Ph Values ◽

Spice Model ◽

Effect Transistor ◽

Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

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