SHORT TERM APPLICATIONS OF LOW AND HIGH TEMPERATURE STRESSES TO ROOTS FOR HIGH QUALITY SPINACH (SPINACIA OLERACEA L.)

2012 ◽  
pp. 351-358 ◽  
Author(s):  
Y. Chadirin ◽  
A. Nakano ◽  
H. Kagawa ◽  
Y. Sago ◽  
M. Kitano
HortScience ◽  
2000 ◽  
Vol 35 (4) ◽  
pp. 624-626 ◽  
Author(s):  
Changhoo Chun ◽  
Ayumi Watanabe ◽  
Toyoki Kozai ◽  
Hyeon-Hye Kim ◽  
Junya Fuse

Spinach (Spinacia oleracea L. cv. Dimple) was chosen to determine whether bolting (i.e., elongation of flower stalks) could be controlled by manipulating the photoperiod during transplant production in a closed system using artificial light. Plants grown under various photoperiods during transplant production were transferred and cultured under natural short photoperiods and artificial long photoperiods. Vegetative growth at transplanting tended to be greater with the longer photoperiod because of the increased integrated photosynthetic photon flux. Bolting initiation reacted qualitatively to a long photoperiod, and the critical photoperiod for bolting initiation was longer than 13 h and shorter than 15 h. The plants grown under a longer photoperiod during transplant production had longer flower stalks at harvest. The long photoperiod and/or high temperature after transplanting therefore promoted flower stalk elongation. Growing plants under a photoperiod that was shorter than the critical photoperiod during transplant production reduced elongation of the flower stalks, thus there was no loss of market value even though the plants were cultured under a long photoperiod and high temperature for 2 weeks after transplanting.


2019 ◽  
Author(s):  
Aurelio A. Rossinelli ◽  
Henar Rojo ◽  
Aniket S. Mule ◽  
Marianne Aellen ◽  
Ario Cocina ◽  
...  

<div>Colloidal semiconductor nanoplatelets exhibit exceptionally narrow photoluminescence spectra. This occurs because samples can be synthesized in which all nanoplatelets share the same atomic-scale thickness. As this dimension sets the emission wavelength, inhomogeneous linewidth broadening due to size variation, which is always present in samples of quasi-spherical nanocrystals (quantum dots), is essentially eliminated. Nanoplatelets thus offer improved, spectrally pure emitters for various applications. Unfortunately, due to their non-equilibrium shape, nanoplatelets also suffer from low photo-, chemical, and thermal stability, which limits their use. Moreover, their poor stability hampers the development of efficient synthesis protocols for adding high-quality protective inorganic shells, which are well known to improve the performance of quantum dots. <br></div><div>Herein, we report a general synthesis approach to highly emissive and stable core/shell nanoplatelets with various shell compositions, including CdSe/ZnS, CdSe/CdS/ZnS, CdSe/Cd<sub>x</sub>Zn<sub>1–x</sub>S, and CdSe/ZnSe. Motivated by previous work on quantum dots, we find that slow, high-temperature growth of shells containing a compositional gradient reduces strain-induced crystal defects and minimizes the emission linewidth while maintaining good surface passivation and nanocrystal uniformity. Indeed, our best core/shell nanoplatelets (CdSe/Cd<sub>x</sub>Zn<sub>1–x</sub>S) show photoluminescence quantum yields of 90% with linewidths as low as 56 meV (19.5 nm at 655 nm). To confirm the high quality of our different core/shell nanoplatelets for a specific application, we demonstrate their use as gain media in low-threshold ring lasers. More generally, the ability of our synthesis protocol to engineer high-quality shells can help further improve nanoplatelets for optoelectronic devices.</div>


Tsitologiya ◽  
2018 ◽  
Vol 60 (2) ◽  
pp. 128-135 ◽  
Author(s):  
L. M. Babenko ◽  
◽  
N. N. Scherbatiuk ◽  
D. A. Klimchuk ◽  
I. V. Kosakovskaya ◽  
...  

2009 ◽  
Vol 34 (12) ◽  
pp. 2196-2201 ◽  
Author(s):  
Xue-Li QI ◽  
Lin HU ◽  
Hai-Bin DONG ◽  
Lei ZHANG ◽  
Gen-Song WANG ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.


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