Peculiarities of the method in internal formation of structures in bipolar and CMOS technologies

The possibility of creating silicon bipolar high-power microwave transistors by the method of ion doping of monosilicon with B + ions through a layer of SiO2 and emitter windows in it with the subsequent introduction of P + ions into them and annealing in argon is shown. The developed process reduces the labor intensity of manufacturing and improves the frequency and power characteristics of transistors: increasing the cut-off frequency (collector current = 1.5 A) from 1.8 to 2.1 GHz and from 1.5 to 1.9 GHz (collector current = 2,8 A), output power from 20 to 21.3 W, power gain from 2.5 to 2.7, collector efficiency from 60 to 79.8 %. The formation of pockets of n- and p- type CMOS structures was considered using a mask of thermal SiO2 without a layer of Si3N4. The developed process reduces the labor intensity of manufacturing by ~ 21.5 % and increases the yield of CMOS microcircuit structures by ~ 4.5 %, thanks to a decrease in the residual stresses in monosilicon and the improvement of pocket doping methods.

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Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT

Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering ◽

10.17073/1609-3577-2018-3-182-193 ◽

2019 ◽

Vol 21 (3) ◽

pp. 182-193

Author(s):

K. L. Enisherlova ◽

B. K. Medvedev ◽

E. M. Temper ◽

V. I. Korneev

Keyword(s):

Ohmic Contacts ◽

Structural Features ◽

Structural Defects ◽

Conducting Layer ◽

Leakage Currents ◽

Surface Microrelief ◽

Microwave Transistors ◽

High Power Microwave ◽

New Type ◽

Power Microwave

Abstract. In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies were carried out directly on high−power microwave transistors made of GaN/AlGaN/GaN/SiC heterostructures. Ohmic burning contacts were formed using the compositions Ti—Al—Mo—Au and Ti—Al—Ni—Au. To estimation the structural features of the contact areas, the surface microrelief at the interface of the burned contact/AlGaN and the defects formed on its surface was studied. It is shown that the resistance of the source and drain regions is largely determined by the surface microstructure at the boundary. Experimentally shown is the formation of a conducting layer in AlGaN under the ohmic contacts. The possibility of the formation of a new type of structural defects with a high aspect ratio in the contact and active areas of the devices during the formation of ohmic burned contacts is demonstrated. It is shown that the appearance of high densities of such defects leads to an increase of the device leakage currents.

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Non-linear modeling for low and high power microwave transistors

2016 46th European Microwave Conference (EuMC) ◽

10.1109/eumc.2016.7824476 ◽

2016 ◽

Cited By ~ 1

Author(s):

Guillermo Rafael-Valdivia ◽

Zhiguo Su

Keyword(s):

High Power ◽

Linear Modeling ◽

Microwave Transistors ◽

High Power Microwave ◽

Non Linear ◽

Power Microwave

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Multi-physics modeling of high-power microwave transistors

2012 IEEE/MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2012.6259471 ◽

2012 ◽

Cited By ~ 2

Author(s):

Peter H. Aaen ◽

John Wood ◽

Daren Bridges ◽

Lei Zhang ◽

Eric Johnson ◽

...

Keyword(s):

High Power ◽

Microwave Transistors ◽

High Power Microwave ◽

Physics Modeling ◽

Power Microwave

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High Power Microwave Transistors

IETE Technical Review ◽

10.1080/02564602.1986.11437891 ◽

1986 ◽

Vol 3 (2) ◽

pp. 39-46

Author(s):

N R Mantena

Keyword(s):

High Power ◽

Microwave Transistors ◽

High Power Microwave ◽

Power Microwave

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Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits

ITM Web of Conferences ◽

10.1051/itmconf/20193011002 ◽

2019 ◽

Vol 30 ◽

pp. 11002

Author(s):

Vladimir Evseev ◽

Mikhail Ivlev ◽

Elena Lupanova ◽

Sergey Nikulin ◽

Vitaliy Petrov ◽

...

Keyword(s):

High Power ◽

Microwave Power ◽

Contact Device ◽

Complex Conjugate ◽

Variable Load ◽

Microwave Transistors ◽

High Power Microwave ◽

Non Linear ◽

S Parameters ◽

Power Microwave

In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.

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Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.933 ◽

2007 ◽

Vol 556-557 ◽

pp. 933-936

Author(s):

Nicolas Camara ◽

L.P. Romanov ◽

A.V. Kirillov ◽

Mykola S. Boltovets ◽

Alexander A. Lebedev ◽

...

Keyword(s):

High Power ◽

Electrical Characterization ◽

Contact Layer ◽

Device Fabrication ◽

Base Layer ◽

Power Switching ◽

High Power Microwave ◽

Type Contact ◽

P Type ◽

Power Microwave

4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave testing) has been performed. The results showed that SEV-grown SiC material is suitable for bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower than 1016 cm-3 for the n-type base layer is necessary to demonstrate microwave p-i-n diodes with similar performance as the ones fabricated on commercially available CVD-grown material.

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