scholarly journals Electric field-induced resistance changes at low temperature on a Cr2O3/ultra-thin (La,Sr)MnO3 magnetic hetero structure

2009 ◽  
Vol 117 (1365) ◽  
pp. 639-642
Author(s):  
Takeshi YOKOTA ◽  
Shotaro MURATA ◽  
Shinya KITO ◽  
Manabu GOMI
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Induced Resistance ◽  
Hetero Structure

Low temperature electric pulse induced resistance switching in Na0.5−δCoO2

2008 ◽  
Vol 93 (15) ◽  
pp. 152110 ◽  
Author(s):  
G. Garbarino ◽  
M. Núñez-Regueiro ◽  
M. Armand ◽  
P. Lejay
Keyword(s):  
Low Temperature ◽  
Induced Resistance ◽  
Electric Pulse ◽  
Resistance Switching

scholarly journals One-pot manufacture of nanoparticle-based films in aqueous media via an electric field-driven assembly process

2014 ◽  
Vol 16 (6) ◽  
pp. 3286-3296 ◽  
Author(s):  
Isabel Gonzalo-Juan ◽  
Juan A. Escribano ◽  
Yolanda Castro ◽  
Antonio J. Sanchez-Herencia ◽  
Jose Luis G. Fierro ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Aqueous Media ◽  
Assembly Process ◽  
One Pot

We present a one-pot process to produce an extremely dense packed YSZ nanostructure that can consolidate at unconventionally low temperature.

scholarly journals Electrical Promotion-Assisted Automotive Exhaust Catalyst: Highly Active and Selective NO Reduction to N2 at Low-Temperatures

2021 ◽  
Author(s):  
Yuki Omori ◽  
Ayaka Shigemoto ◽  
Kohei Sugihara ◽  
Takuma Higo ◽  
Toru Uenishi ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Low Temperature ◽  
Electric Field ◽  
Low Temperatures ◽  
No Reduction ◽  
Lattice Oxygen ◽  
Pd Catalyst ◽  
Highly Active ◽  
Automotive Exhaust Catalyst ◽  
Activated Surface

Pd catalyst (Pd/Ce<sub>0.7</sub>Zr<sub>0.3</sub>O<sub>2</sub>) in an electric field exhibits extremely high three-way catalytic activity (TWC: NO-C<sub>3</sub>H<sub>6</sub>-CO-O<sub>2</sub>-H<sub>2</sub>O). By applying an electric field to the semiconductor catalyst, low-temperature operation of TWC can be achieved even at 473 K by virtue of the activated surface-lattice oxygen.

The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions

1990 ◽  
Vol 182 ◽  
Author(s):  
Kyoung-Soo Yi ◽  
Deok-Ho Cho ◽  
Jeong Yong Lee ◽  
Kee-Soo Nam ◽  
Sang-Won Kang ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Dielectric Property ◽  
Electrical Properties ◽  
Low Temperature ◽  
Electric Field ◽  
Transmission Electron ◽  
Formation Conditions ◽  
Temperature Oxide ◽  
Amorphous Si ◽  
Current Electric Field

AbstractPrior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

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