scholarly journals Simultaneous Determination of V, As, Se, Cd, Ba and Pb in Coal by ICP-MS after High Pressure Oxygen Combustion

2007 ◽  
Vol 56 (4) ◽  
pp. 213-219 ◽  
Author(s):  
Kazuko Akiyama ◽  
Yoshiko Arikawa
Keyword(s):  
High Pressure ◽  
Simultaneous Determination ◽  
Pressure Oxygen ◽  
Icp Ms ◽  
High Pressure Oxygen

scholarly journals Determination of arsenic in environmental samples by hydride generation AAS after combustion in high-pressure oxygen.

1995 ◽  
Vol 44 (5) ◽  
pp. 405-409 ◽  
Author(s):  
Yukiko IMAIZUMI ◽  
Sawako SUGIMOTO ◽  
Yoko KANAYAMA ◽  
Yoshiko ARIKAWA
Keyword(s):  
High Pressure ◽  
Environmental Samples ◽  
Hydride Generation ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

HIGH PRESSURE OXYGEN A-BAND SPECTRA

2015 ◽  
Author(s):  
Brian Drouin ◽  
Jiajun Hoo ◽  
V. Devi ◽  
D. Benner ◽  
David Robichaud ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Band Spectra

High pressure oxygen iodine laser based on twisted flow singlet oxygen generator

2001 ◽  
Author(s):  
B. Vyskubenko ◽  
A. Adamenkov ◽  
S. Ilyin ◽  
Yu. Kolobyanin ◽  
I. Krukovsky ◽  
...  
Keyword(s):  
High Pressure ◽  
Singlet Oxygen ◽  
Iodine Laser ◽  
Pressure Oxygen ◽  
Twisted Flow ◽  
Oxygen Generator ◽  
Singlet Oxygen Generator ◽  
High Pressure Oxygen

Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
Author(s):  
Kei Kitamura ◽  
Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Effective Action ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Pressure Oxygen ◽  
Gas Atmosphere ◽  
High Pressure Oxygen ◽  
Oxygen Gas ◽  
Basic Characteristics

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

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