scholarly journals A S-Type Bistable Locally-Active Memristor and Its Application in Oscillator Circuit

2021 ◽  
Author(s):  
Chunlai Li ◽  
Haodong Li ◽  
Wenwu Xie ◽  
Jianrong Du
Keyword(s):  
Active Region ◽  
Analog Circuit ◽  
Initial Conditions ◽  
Chaotic Oscillation ◽  
Hysteresis Loops ◽  
Analysis Method ◽  
Oscillator Circuit ◽  
Small Signal Analysis ◽  
Pinched Hysteresis ◽  
Signal Analysis Method

Abstract In this paper, a S-type memristor with tangent nonlinearity is proposed. The introduced memristor can generate two kinds of stable pinched hysteresis loops with initial conditions from two flanks of the initial critical point. The power-off plot verifies that the memristor is nonvolatile, and the DC V-I plot shows that the memristor is locally active with the locally-active region symmetrical about the origin. The equivalent circuit of the memristor, derived by small-signal analysis method, is used to study the dynamics near the operating point in the locally-active region. Owing to the bistable and locally-active properties and S-type DC V-I curve, this memristor is called S-type BLAM for short. Then, a new Wien-bridge oscillator circuit is designed by substituting one of its resistances with S-type BLAM. It find that the circuit system can produce chaotic oscillation and complex dynamic behavior, which is further confirmed by analog circuit experiment.

Locally Active Memristor with Three Coexisting Pinched Hysteresis Loops and Its Emulator Circuit

2020 ◽  
Vol 30 (13) ◽  
pp. 2050184
Author(s):  
Minghao Zhu ◽  
Chunhua Wang ◽  
Quanli Deng ◽  
Qinghui Hong
Keyword(s):  
Active Region ◽  
Chaotic System ◽  
Piecewise Linear ◽  
Chaotic Oscillation ◽  
Hysteresis Loops ◽  
State Equation ◽  
The Novel ◽  
Oscillation System ◽  
Memristor Emulator ◽  
Pinched Hysteresis

Locally active memristors with multiple coexisting pinched hysteresis loops have attracted the attention of researchers. However, the currently reported multiple coexisting pinched hysteresis loops memristors are obtained by adding additional piecewise-linear terms into the original Chua corsage memristor. This paper proposes a novel locally active memristor by introducing a polynomial characteristic function into the state equation. The novel memristor has three coexisting pinched hysteresis loops, large relative range of active region and simple emulator circuit. The characteristics of the novel memristor such as power-off plot, coexisting pinched hysteresis loops and DC [Formula: see text]–[Formula: see text] plot are studied. The memristor is used in a Chua chaotic system to investigate the effects of locally active characteristic on the chaotic oscillation system. Furthermore, the memristor emulator and chaotic system are designed and implemented by commercial circuit elements. The hardware experiments are consistent with numerical simulations.

scholarly journals On the Equivalence of the Switched Inductor and the Tapped Inductor Converters and its Application to Small Signal Modelling

Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4806
Author(s):  
Jia Yao ◽  
Kewei Li ◽  
Kaisheng Zheng ◽  
Alexander Abramovitz
Keyword(s):  
Signal Analysis ◽  
Buck Converter ◽  
Small Signal ◽  
Analysis Method ◽  
Signal Model ◽  
Small Signal Analysis ◽  
Small Signal Model ◽  
Signal Modelling ◽  
Small Signal Modeling ◽  
Signal Analysis Method

Switched inductor (SI) converters are popular in applications requiring a steeper conversion ratio. However, these converters operate a twin inductor switching cell, which complicates the small-signal modeling. This paper proposes an expeditious small-signal analysis method to model the SI converters. The offered modeling approach is hinged on the analogy existing between the SI converters and certain Tapped Inductor (TI) converters. It is suggested here that by virtue of the analogy of the SI converters and TI converters the small-signal model of the SI converter is identical to that of its ideal TI counterpart. Hence, the recently developed Tapped Inductor Switcher (TIS) methodology can be applied to the modeling of the SI converters as well. As an example, the small-signal model of the Switched Inductor Buck converter is obtained. Theoretical analysis was confirmed by simulation and experimental results. In addition, several other SI converters and their TI counterparts are identified.

STUDY ON SMALL-SIGNAL IMPEDANCE OF SINGLE-WALLED ZIGZAG CARBON NANOTUBES IN TERAHERTZ FREQUENCY REGIME

2013 ◽  
Vol 27 (21) ◽  
pp. 1350105 ◽  
Author(s):  
C. WANG ◽  
J. C. CAO
Keyword(s):  
Carbon Nanotubes ◽  
Differential Resistance ◽  
Small Signal ◽  
Analysis Method ◽  
Terahertz Frequency ◽  
Promising Candidate ◽  
Small Signal Analysis ◽  
Current Voltage ◽  
Frequency Regime ◽  
Signal Analysis Method

We theoretically study the static and dynamic transport properties of Mott–Gurney diodes based on semiconducting single-walled zigzag carbon nanotubes (CNTs). The electric field and velocity distribution of the diode under dc voltage is obtained by solving the steady-state drift-diffusion equations, which involve the negative differential velocity. The current–voltage characteristic of CNT diode exhibits a distinctive positive differential resistance. The high-frequency impedance is calculated with the small-signal analysis method. A major feature of the proposed CNT diode is that the bias- and tube index-dependent impedance show several negative windows in terahertz frequency range despite the positivity of the dc differential resistance. This property makes the CNT-based Mott–Gurney diode a promising candidate for the generation and amplification of terahertz signals within the desired frequency region.

Dynamic Response of the Spectral Element Model by Using the FFT

2007 ◽  
Vol 345-346 ◽  
pp. 845-848
Author(s):  
Joo Yong Cho ◽  
Han Suk Go ◽  
Usik Lee
Keyword(s):  
Fourier Transforms ◽  
Initial Conditions ◽  
Element Model ◽  
Spectral Element ◽  
Dynamic Responses ◽  
Analysis Method ◽  
Euler Beam ◽  
Exact Analytical Solutions ◽  
Simply Supported ◽  
Spectral Analysis Method

In this paper, a fast Fourier transforms (FFT)-based spectral analysis method (SAM) is proposed for the dynamic analysis of spectral element models subjected to the non-zero initial conditions. To evaluate the proposed SAM, the spectral element model for the simply supported Bernoulli-Euler beam is considered as an example problem. The accuracy of the proposed SAM is evaluated by comparing the dynamic responses obtained by SAM with the exact analytical solutions.

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