scholarly journals Design of a Low Power Hybrid Electro-Optic Plasmonic Modulator Based on ITO and Graphene

2021 ◽  
Author(s):  
Omid Abbaszadeh-Azar ◽  
Kambiz Abedi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Extinction Ratio ◽  
Fdtd Method ◽  
Silicon On Insulator ◽  
Operating Voltage ◽  
Electro Optic ◽  
Matter Interaction ◽  
Light Matter Interaction ◽  
The Time Domain

Abstract In this paper, a hybrid plasmonic modulator based on ITO and graphene has been proposed and designed. Graphene and ITO are used in the active region, which increases the light-matter interaction and reduces the device's operating voltage in the proposed modulator. As a result, it increases the extinction ratio (ER), reduces power consumption and device footprint in the proposed modulator compared to similar modulators. The values of 14 dB/µm and 5.4 fJ are obtained for ER and power consumption, respectively. The time-domain finite-difference (FDTD) method is used to simulate the modulator. The integration of a modulator with high light-matter interaction and low power consumption in the silicon-on-insulator platform has significant potential for broadband, compact and efficient communication interconnects and circuits.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

2009 ◽  
Vol 48 (4) ◽  
pp. 04C104 ◽  
Author(s):  
Maoqing Xin ◽  
Aaron J. Danner ◽  
Ching Eng Png ◽  
Soon Thor Lim
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Electro Optic ◽  
Electro Optic Modulator

Ion Gel-Coated Graphene Transistor for Ethanol Gas Sensing

2021 ◽  
Vol 105 ◽  
pp. 3-7
Author(s):  
De Sheng Liu ◽  
Jiang Wu ◽  
Zhi Ming Wang
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Industrial Production ◽  
Gas Sensing ◽  
Drunk Driving ◽  
Fast Response ◽  
Low Power Consumption ◽  
Operating Voltage ◽  
Ethanol Sensor ◽  
Ion Gel

Ethanol sensor has been widely used in our daily life and industrial production, such as drunk driving test, food fermentation monitoring, and industrial gas leakage monitoring. With the advent of the Internet of Things (IoT) era, ethanol sensors will develop towards miniaturization and low-power consumption in the near future. However, traditional ethanol sensors with large volumes and high-power consumption are difficult to meet these requirements. Therefore, it is urgent to study ethanol gas sensors based on new materials and new structures. Here, we demonstrated a flexible ethanol sensor based on an ion gel-coated graphene field-effect transistor (IGFET). The device has a small graphene channel size with a width of 300 μm and a length of 200 μm. The device showed a low operating voltage of less than |±1| V. When the device was put into an ethanol gas condition, the Dirac point voltage of the IGFET showed a negative shift, which means an n-type doping effect to the graphene channel. Furthermore, the sensor showed a normalized current change of-11% against an ethanol gas concentration of 78.51 g/L at a constant drain-source voltage of 0.1 V. In addition, the device exhibited a fast response time of ~10 s and a recovery time of ~18 s. Moreover, the detectable range of the device was found to as wide as 19.76-785.1 g/L. Based on the above results, the flexible IGFET-based ethanol sensor with small size and low-power consumption has great potential to be used in the industrial production of the IoT era.

scholarly journals Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Song Feng ◽  
Lian-bi Li ◽  
Bin Xue
Keyword(s):  
Carrier Density ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Carrier Injection ◽  
Band Theory ◽  
Free Spectrum ◽  
Electro Optic ◽  
Double Heterojunction ◽  
Electro Optic Modulator ◽  
Modulation Voltage

The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI) micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

Planar electro-optic deflector using KTa1−xNbxO3for low-power-consumption operation

2017 ◽  
Vol 10 (10) ◽  
pp. 102201
Author(s):  
Shoko Tatsumi ◽  
Yuzo Sasaki ◽  
Seiji Toyoda ◽  
Tadayuki Imai ◽  
Junya Kobayashi ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Electro Optic

scholarly journals A compact plasmonic MOS-based 2×2 electro-optic switch

Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 261-268 ◽  
Author(s):  
Chenran Ye ◽  
Ke Liu ◽  
Richard A. Soref ◽  
Volker J. Sorger
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Extinction Ratio ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Seamless Integration ◽  
Electro Optic

Abstract We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

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