Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket engineering, work-function engineering, and gate dielectric engineering, respectively. The electrical characteristics of the device has been investigated by using Synopsys Sentaurus TCAD tool and compared with some recent other TFETs. The proposed Ge-source L-TFET device with n-type pocket shows ON-state current of 2.12*10-5 Aµm-1, OFF-state current of 1.09*10-13 Aµm-1, current ratio of ~108 and sub-threshold slope (SS) of 21 mV/decade and the threshold voltage of 0.26 V and compared to the conventional Si/Ge source L-shaped TFETs without pocket simulation result. The pocket engineering techniques suppress the leakage without degrading the ON current, threshold voltage and SS of the proposed device. The simplified fabrication steps of the proposed device have also been discussed. The proposed L-TFET is free from ambipolarity issues and can be used to develop low-power switching devices.