Heterogate junctionless tunnel field-effect transistor: future of low-power devices

2016 ◽  
Vol 16 (1) ◽  
pp. 30-38 ◽  
Author(s):  
Shiromani Balmukund Rahi ◽  
Pranav Asthana ◽  
Shoubhik Gupta
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Power Devices ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

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