Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

Microelectronics Reliability ◽

10.1016/j.microrel.2015.09.014 ◽

2016 ◽

Vol 59 ◽

pp. 30-36 ◽

Author(s):

Ping Wang ◽

YiQi Zhuang ◽

Cong Li ◽

Zhi Jiang ◽

YuQi Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two‐dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field‐effect transistor

Micro & Nano Letters ◽

10.1049/mnl.2016.0351 ◽

2017 ◽

Vol 12 (1) ◽

pp. 11-16 ◽

Author(s):

Dheeraj Sharma ◽

Bhagwan Ram Raad ◽

Dharmendra Singh Yadav ◽

Pravin Kondekar ◽

Kaushal Nigam

Keyword(s):

Electric Field ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Modeling and simulation of multi layer gate dielectric double gate tunnel field-effect transistor (DG-TFET)

IEEE Technology Students' Symposium ◽

10.1109/techsym.2011.5783830 ◽

2011 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta ◽

R. S. Gupta

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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Analytical drain current model of strained junctionless nanowire tunnel field-effect transistor fabricated on S i 1 − x G e x virtual substrate

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2019.0515 ◽

2020 ◽

Vol 14 (8) ◽

pp. 1195-1200

Author(s):

Yefei Zhang ◽

Zunchao Li

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.064503 ◽

2009 ◽

Vol 48 (6) ◽

pp. 064503 ◽

Author(s):

Sneh Saurabh ◽

M. Jagadesh Kumar

Keyword(s):

Theoretical Investigation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling

Journal of Computational Electronics ◽

10.1007/s10825-014-0649-x ◽

2014 ◽

Vol 14 (1) ◽

pp. 280-287 ◽

Author(s):

Pratyush Pandey ◽

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Depletion Region ◽

Band To Band Tunneling ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0772-3 ◽

2015 ◽

Vol 15 (1) ◽

pp. 104-114 ◽

Author(s):

Saheli Sarkhel ◽

Navjeet Bagga ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

2D Modeling ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Journal of Semiconductors ◽

10.1088/1674-4926/39/10/104004 ◽

2018 ◽

Vol 39 (10) ◽

pp. 104004

Author(s):

Huifang Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Negative Capacitance ◽

Double Gate ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

Journal of Applied Physics ◽

10.1063/1.4808453 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214507 ◽

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Inversion Region ◽

Effect Transistor

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Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-020-01496-4 ◽

2020 ◽

Vol 19 (3) ◽

pp. 1154-1163 ◽

Author(s):

Shailendra Singh ◽

Balwinder Raj

Keyword(s):

Surface Potential ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

Two Dimensional ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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