scholarly journals Electric Properties of AlGaN/GaN/Si High Electron Mobility Transistors

2021 ◽  
Author(s):  
H. Mosbahi ◽  
Malek GASSOUMI ◽  
A. Bchetnia ◽  
M.A. Zaidi
Keyword(s):  
Molecular Beam ◽  
Electric Modulus ◽  
Strain Relaxation ◽  
Electrical Conductance ◽  
High Electron Mobility Transistors ◽  
Deep Trap ◽  
High Electron ◽  
Modulus Formalism ◽  
Electron Mobility Transistors ◽  
Barrier Inhomogeneity

Abstract This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy. The electrical behavior have been investigated using by electric permittivity, modulus formalism and conductance measurements. As has been found from electrical conductance, dispersive behavior is related to barrier inhomogeneity and deep trap in barrier layer. On the other hand, the strain relaxation of charge transport is studied both permittivity and electric modulus formalisms.

scholarly journals On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology

2021 ◽  
Vol 21 (4) ◽  
pp. 2472-2482
Author(s):  
Lis K. Nanver ◽  
Tihomir Knezevic ◽  
Xingyu Liu ◽  
Shivakumar D. Thammaiah ◽  
Max Krakers
Keyword(s):  
Potassium Hydroxide ◽  
Molecular Beam ◽  
Microelectromechanical Systems ◽  
Ammonium Hydroxide ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Euv Lithography ◽  
Tetramethyl Ammonium Hydroxide ◽  
The Many

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow p+n-like Si diode junctions that are both electrically and chemically very robust. They are presently used commercially in photodiode detectors for extremeultraviolet (EUV) lithography and scanning-electron-microscopy (SEM) systems. By using chemicalvapor deposition (CVD) or molecular beam epitaxy (MBE) to deposit the B, PureB diodes have been fabricated at temperatures from an optimal 700 °C to as low as 50 °C, making them both front- and back-end-of-line CMOS compatible. On Ge, near-ideal p+n-like diodes were fabricated by covering a wetting layer of Ga with a PureB capping layer (PureGaB). For GaN high electron mobility transistors (HEMTs), an Al-on-PureB gate stack was developed that promises to be a robust alternative to the conventional Ni-Au gates. In MEMS processing, PureB is a resilient nm-thin masking layer for Si micromachining with tetramethyl ammonium hydroxide (TMAH) or potassium hydroxide (KOH), and low-stress PureB membranes have also been demonstrated.

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