Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Götz ◽  
D. B. Oberman ◽  
J. S. Harris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Growth Parameters ◽  
Ecr Plasma ◽  
Gas Source ◽  
Deep Donor ◽  
Hall Effect Measurements ◽  
Gas Source Mbe

AbstractGaN thin films grown by molecular beam epitaxy (MBE) were characterized by Hall effect measurements in the temperature range from 80 K to 500 K and by photoluminescence spectroscopy (PL) at 2 K and at 300 K. These films were grown by MBE utilizing either electron cyclotron resonance (ECR) plasma activated nitrogen gas or thermally cracked hydrogen azide (HN3) as the source of chemically reactive nitrogen. The electrical properties of the GaN films grown by ECR plasma assisted MBE were found to vary with growth parameters, dominated either by shallow donors with activation energies (ΔE)in the range between 10 meV and 30 meV or deep donor levels (ΔE; > 500 meV). GaN grown by (HN3) gas-source MBE exhibited metallic conduction and electron mobilities <1 cm2/Vs. However, these films displayed sharp photoluminescence lines at 3.360 eV and 3.298 eV and no deep level related luminescence, whereas only broad deep level related emission was observed in the PL spectra of the ECR plasma assisted MBE grown GaN films.

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
A. H. Onstine ◽  
B. P. Gila ◽  
J. Kim ◽  
D. Stodilka ◽  
K. Allums ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxygen Pressure ◽  
Molecular Beam ◽  
Breakdown Field ◽  
Rf Plasma ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Gas Source ◽  
Effect Of Oxygen

ABSTRACTThe effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10−5Torr, produced the lowest Dit, 3×1011 eV−1cm−2, and the highest VBD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

AlN Grown by Metalorganic Molecular Beam Epitaxy

1994 ◽  
Vol 363 ◽  
Author(s):  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Nitrogen Sources ◽  
Plasma Source ◽  
Structural Quality ◽  
X Ray ◽  
Ecr Plasma ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Surface Morphologies

AbstractThin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using amine bonded alane precursors, tertiarybutylamine, and nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5 − 1 × 10−4 Torr range. The growth rates, impurity backgrounds and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, ∼ 400°C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD), indicating a surface roughness of ∼ 8 Å and an x-ray width half maximum (FWHM) of 430 arcsec.

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103707 ◽  
Author(s):  
M. Kaneko ◽  
T. Hashizume ◽  
V. A. Odnoblyudov ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Gas Source

Facet Formation in Submicron Selective Growth of Si/SiGe

1996 ◽  
Vol 448 ◽  
Author(s):  
K. L. Wang ◽  
Dawen Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Gas Source ◽  
Pressure Chemical ◽  
Facet Growth ◽  
Facet Formation

AbstractThe paper reviews the work in mostly Si and SiGe epitaxy and some III-V work on patterned substrates. Results of metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), gas source molecular beam epitaxy (GSMBE), and solid source molecular beam epitaxy (MBE) were discussed in the context of facet formation and mass accumulation. A model was shown to explain the facet formation and its evolution in the process of growth. Further work on surface diffusion and nucleation processes as functions of temperature and other growth parameters will provide needed information for accurate modeling of the facet growth process.

Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

1993 ◽  
Vol 8 (9) ◽  
pp. 2310-2314 ◽  
Author(s):  
L.B. Rowland ◽  
R.S. Kern ◽  
S. Tanak ◽  
Robert F. Davis
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Effusion Cell ◽  
Nitrogen Species ◽  
Gas Source ◽  
Resonance Plasma

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
Sign in / Sign up

Export Citation Format

Share Document