Single Spin Readout for the Silicon-Based Quantum Computer

2007 ◽  
Author(s):  
P. C. Hammel
Keyword(s):  
Quantum Computer ◽  
Single Spin ◽  
Silicon Based

scholarly journals A silicon-based surface code quantum computer

2016 ◽  
Vol 2 (1) ◽  
Author(s):  
Joe O’Gorman ◽  
Naomi H Nickerson ◽  
Philipp Ross ◽  
John JL Morton ◽  
Simon C Benjamin
Keyword(s):  
Quantum Computing ◽  
Solid State ◽  
Quantum Computer ◽  
Fault Tolerant ◽  
Device Fabrication ◽  
Impurity Atoms ◽  
Dipole Interactions ◽  
Total Phase ◽  
Surface Code ◽  
Silicon Based

Abstract Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: there is a basic conflict between nanometre separation desired for qubit–qubit interactions and the much larger scales that would enable control and addressing in a manufacturable and fault-tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid-state spins, or ‘data qubits’, that are widely separated from one another. We use a second set of ‘probe’ spins that are mechanically separate from the data qubits and move in and out of their proximity. The spin dipole–dipole interactions give rise to phase shifts; measuring a probe’s total phase reveals the collective parity of the data qubits along the probe’s path. Using a protocol that balances the systematic errors due to imperfect device fabrication, our detailed simulations show that substantial misalignments can be handled within fault-tolerant operations. We conclude that this simple ‘orbital probe’ architecture overcomes many of the difficulties facing solid-state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.

scholarly journals Silicon-based spin and charge quantum computation

2005 ◽  
Vol 77 (2) ◽  
pp. 201-222 ◽  
Author(s):  
Belita Koiller ◽  
Xuedong Hu ◽  
Rodrigo B. Capaz ◽  
Adriano S. Martins ◽  
Sankar Das Sarma
Keyword(s):  
Quantum Computation ◽  
Quantum Interference ◽  
Quantum Computer ◽  
Building Blocks ◽  
Shallow Donor ◽  
Molecular Ions ◽  
Conduction Band Edge ◽  
Tunnel Coupling ◽  
Qubit Operations ◽  
Silicon Based

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P+2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.

SILICON-BASED NUCLEAR SPIN QUANTUM COMPUTER

2005 ◽  
Vol 03 (supp01) ◽  
pp. 27-40 ◽  
Author(s):  
HSI-SHENG GOAN
Keyword(s):  
Solid State ◽  
Nuclear Spin ◽  
Quantum Computer ◽  
Theoretical Progress ◽  
Spin Quantum ◽  
Basic Physics ◽  
Qubit Operations ◽  
Silicon Based

We review the basic physics and operation principles of the silicon-based quantum computer proposed by Kane, one of the most promising solid-state quantum computer proposals. We describe in some details how single- and two-qubit operations and readout measurements can, in principle, be performed for the Kane quantum computer. In addition, we also mention briefly its recent theoretical progress and development.

Towards the atomic-scale fabrication of a silicon-based solid state quantum computer

2003 ◽  
Vol 532-535 ◽  
pp. 1209-1218 ◽  
Author(s):  
Michelle Y. Simmons ◽  
Steven R. Schofield ◽  
Jeremy L. O’Brien ◽  
Neil J. Curson ◽  
Lars Oberbeck ◽  
...  
Keyword(s):  
Solid State ◽  
Quantum Computer ◽  
Atomic Scale ◽  
Silicon Based

scholarly journals Erratum: A silicon-based surface code quantum computer

2016 ◽  
Vol 2 (1) ◽  
Author(s):  
Joe O’Gorman ◽  
Naomi H Nickerson ◽  
Philipp Ross ◽  
John JL Morton ◽  
Simon C Benjamin
Keyword(s):  
Quantum Computer ◽  
Surface Code ◽  
Silicon Based

Construction of a silicon-based solid state quantum computer

2001 ◽  
Vol 1 (Special) ◽  
pp. 82-95
Author(s):  
A.S. Dzurak ◽  
M.Y. Simmons ◽  
A.R. Hamilton ◽  
R.G. Clark ◽  
R. Brenner ◽  
...  
Keyword(s):  
Large Scale ◽  
Quantum Computer ◽  
Atomic Scale ◽  
Single Electron Transistor ◽  
Epitaxial Silicon ◽  
Top Down ◽  
Bottom Up ◽  
Near Term ◽  
Silicon Based ◽  
Coincidence Measurements

We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.

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