MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

2012 ◽  
Author(s):  
Fred Semendy ◽  
Patrick Taylor ◽  
Gregory Meissner ◽  
Priyalal Wijewarnasuriya
2010 ◽  
Author(s):  
Fred Semendy ◽  
Patrick Taylor ◽  
Gregory Meissner ◽  
Priyalal Wijewarnasuriya

Author(s):  
Dyan Ali ◽  
Phillip Thompson ◽  
Joseph DiPasquale ◽  
Christopher J. K. Richardson

2008 ◽  
Vol 73A (8) ◽  
pp. 767-776 ◽  
Author(s):  
William G. Lawrence ◽  
Gyula Varadi ◽  
Gerald Entine ◽  
Edward Podniesinski ◽  
Paul K. Wallace

2017 ◽  
Vol 28 (8) ◽  
pp. 085201 ◽  
Author(s):  
Junhong Na ◽  
Kichul Park ◽  
Jin Tae Kim ◽  
Won Kook Choi ◽  
Yong-Won Song

2014 ◽  
Vol 9 (1) ◽  
pp. 519 ◽  
Author(s):  
Peng Zhang ◽  
Shibin Li ◽  
Chunhua Liu ◽  
Xiongbang Wei ◽  
Zhiming Wu ◽  
...  

2021 ◽  
Vol 255 ◽  
pp. 01002
Author(s):  
Daniel Benedikovic ◽  
Leopold Virot ◽  
Guy Aubin ◽  
Jean-Michel Hartmann ◽  
Farah Amar ◽  
...  

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.


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