Hydrous fluid as the growth media of natural polycrystalline diamond, carbonado: Implication from IR spectra and microtextural observations

2012 ◽  
Vol 97 (8-9) ◽  
pp. 1366-1372 ◽  
Author(s):  
H. Ishibashi ◽  
H. Kagi ◽  
H. Sakuai ◽  
H. Ohfuji ◽  
H. Sumino
Keyword(s):  
Ir Spectra ◽  
Polycrystalline Diamond ◽  
Growth Media ◽  
Hydrous Fluid

scholarly journals Specific Multiphase Assemblages of Carbonatitic and Al-Rich Silicic Diamond-Forming Fluids/Melts: TEM Observation of Microinclusions in Cuboid Diamonds from the Placers of Northeastern Siberian Craton

Minerals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 50 ◽  
Author(s):  
Alla Logvinova ◽  
Dmitry Zedgenizov ◽  
Richard Wirth
Keyword(s):  
Siberian Craton ◽  
Growth Media ◽  
Bulk Chemical Composition ◽  
Hydrous Fluid ◽  
Bulk Chemical ◽  
River Deposits ◽  
Sio2 Phase ◽  
Compositional Variations ◽  
Different Origins ◽  
Fluid Phases

The microinclusions in cuboid diamonds from Ebelyakh River deposits (northeastern Siberian craton) have been investigated by FIB/TEM techniques. It was found that these microinclusions have multiphase associations, containing silicates, oxides, carbonates, halides, sulfides, graphite, and fluid phases. The bulk chemical composition of the microinclusions indicates two contrasting growth media: Mg-rich carbonatitic and Al-rich silicic. Each media has their own specific set of daughter phases. Carbonatitic microinclusions are characterized by the presence of dolomite, phlogopite, apatite, Mg, Fe-oxide, KCl, rutile, magnetite, Fe-sulfides, and hydrous fluid phases. Silicic microinclusions are composed mainly of free SiO2 phase (quartz), high-Si mica (phengite), Al-silicate (paragonite), F-apatite, Ca-carbonates enriched with Sr and Ba, Fe-sulfides, and hydrous fluid phases. These associations resulted from the cooling of diamond-forming carbonatitic and silicic fluids/melts preserved in microinclusions in cuboid diamonds during their ascent to the surface. The observed compositional variations indicate different origins and evolutions of these fluids/melts.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Microstructural Study of Diamond Deformed Under High Pressure and Temperature

1985 ◽  
Vol 43 ◽  
pp. 230-231
Author(s):  
E. F. Koch
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Lattice Structure ◽  
Diamond Particle ◽  
Polycrystalline Diamond ◽  
Sintering Process ◽  
Ion Milling ◽  
Sintered Compact ◽  
Transmission Electron ◽  
High Pressure Sintering

Because of the extremely rigid lattice structure of diamond, generating new dislocations or moving existing dislocations in diamond by applying mechanical stress at ambient temperature is very difficult. Analysis of portions of diamonds deformed under bending stress at elevated temperature has shown that diamond deforms plastically under suitable conditions and that its primary slip systems are on the ﹛111﹜ planes. Plastic deformation in diamond is more commonly observed during the high temperature - high pressure sintering process used to make diamond compacts. The pressure and temperature conditions in the sintering presses are sufficiently high that many diamond grains in the sintered compact show deformed microtructures.In this report commercially available polycrystalline diamond discs for rock cutting applications were analyzed to study the deformation substructures in the diamond grains using transmission electron microscopy. An individual diamond particle can be plastically deformed in a high pressure apparatus at high temperature, but it is nearly impossible to prepare such a particle for TEM observation, since any medium in which the diamond is mounted wears away faster than the diamond during ion milling and the diamond is lost.

Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4616-4618
Author(s):  
Victor S. Bagaev ◽  
Denis F. Aminev ◽  
Tatiana I. Galkina ◽  
Andrey Yu. Klokov ◽  
Vladimir S. Krivobok ◽  
...  
Keyword(s):  
Diamond Film ◽  
Polycrystalline Diamond ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Photoluminescence Spectra ◽  
Detection Of Stress ◽  
Induced Defects ◽  
Polycrystalline Diamond Film

Optimization of growth media for leafcutter ant-associated antimicrobial producing bacteria using cuticular hydrocarbons

2019 ◽  
Author(s):  
J-P Fladerer ◽  
J Fitzek ◽  
F Bucar
Keyword(s):  
Cuticular Hydrocarbons ◽  
Growth Media

FIRST FAR-IR SPECTRA OF 2,2-D2-PROPANE: THE ν9 (A1) B-TYPE BAND NEAR 365.3508 cm−1. THE DETERMINATION OF GROUND AND UPPER STATE CONSTANTS.

2018 ◽  
Author(s):  
Daniel Gjuraj ◽  
Brant Billinghurst ◽  
Jean-Marie Flaud ◽  
Walter Lafferty ◽  
Robert Grzywacz ◽  
...  
Keyword(s):  
Ir Spectra ◽  
Type Band

FIRST HIGH RESOLUTION IR SPECTRA OF 2,2-D2-PROPANE. THE ν15 (B1) A-TYPE BAND NEAR 954.709 cm−1. DETERMINATION OF GROUND AND UPPER STATE CONSTANTS.

2017 ◽  
Author(s):  
Daniel Gjuraj ◽  
Brant Billinghurst ◽  
Jean-Marie Flaud ◽  
Walter Lafferty ◽  
Robert Grzywacz ◽  
...  
Keyword(s):  
High Resolution ◽  
Ir Spectra ◽  
Type Band

SINTESIS DAN MODIFIKASI STRUKTUR DAN PORI MEMBRAN KITOSAN TERCROSSLINK UNTUK STERILISASI MEDIA PERTUMBUHAN BAKTERI

2019 ◽  
Vol 3 (2) ◽  
pp. 27
Author(s):  
Emma Savitri ◽  
Natalia Suseno ◽  
Tokok Adiarto
Keyword(s):  
Tensile Strength ◽  
Chitosan Solution ◽  
Curing Temperature ◽  
Growth Media ◽  
Optimum Conditions ◽  
Separation Processes ◽  
Crosslinking Process ◽  
Chitosan Membrane ◽  
Chitosan Membranes ◽  
Crosslinked Chitosan

Many mass-transfer applications have used chitosan membrane in separation processes. This research applied crosslinked chitosan membrane to sterillize bacterial growth media. Chitosan membranes having 79 % DD were produced by casting and drying chitosan solution. The images of the membrane were characterized by SEM and other characterizations such as permeability, permselectivity and tensile strength were investigated. The flux increased with longer submersion period but the rejection decreased. Otherwise, the flux decreased and rejection increased in line with an increase in curing temperature. Tensile strength increased with the increase of submersion period and curing temperature. The optimum conditions of crosslinking process are 2 hours of submersion periods and curing temperature at 90 oC.  It gives flux 5.8930 L/jam.m2, rejection 97.47 % and tensile strength 49640 kN/m2

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