scholarly journals THREE-DIMENSIONAL TRANSIENT THERMAL MODEL OF A SNAP REACTOR

1966 ◽  
Author(s):  
P.M. Magee ◽  
R.W. Winson
Author(s):  
Koji Nishi

Abstract In recent years, not only static thermal design but also realtime thermal control become important for power efficiency on computing systems. Three-dimensional thermal simulation is widely used to design computing system, however, it takes too long time for intelligent power and thermal management validation because it requires transient thermal simulation with very short time step. To enable rapid simulation environment, compact thermal model which can be employed with both three-dimensional transient thermal simulation and transient thermal network is required. Therefore, this research aims to establish transient state compact thermal model for microprocessor package. This paper briefly introduces steady state compact thermal model for microprocessor, which is proposed as previous work, then, points out key point to extend the model to transient state model. Transient thermal spreading resistance is emulated and the effect is checked by comparing with three-dimensional simulation.


Author(s):  
Coskun Islam ◽  
Ismail Lazoglu ◽  
Yusuf Altintas

This article presents an enhanced mathematical model for transient thermal analysis in machining processes. The proposed mathematical model is able to simulate transient tool, workpiece, and chip temperature fields as a function of time for interrupted processes with time varying chip loads such as milling and continuous machining processes such as turning and drilling. A finite difference technique with implicit time discretization is used for the solution of partial differential equations to simulate the temperature fields on the tool, workpiece, and chip. The model validations are performed with the experimental temperature measurement data available in the literature for the interrupted turning of Ti6Al6V–2Sn, Al2024, gray cast iron and for the milling of Ti6Al4V. The simulation results and experimental measurements agree well. With the newly introduced modeling approach, it is demonstrated that time-dependent dynamic variations of the temperature fields are predicted with maximum 12% difference in the validated cases by the proposed transient thermal model.


Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1421
Author(s):  
Michał Szulborski ◽  
Sebastian Łapczyński ◽  
Łukasz Kolimas ◽  
Łukasz Kozarek ◽  
Desire Dauphin Rasolomampionona ◽  
...  

In this paper, a detailed three-dimensional, transient, finite element method of fuse link NH000 gG 100 A is proposed. The thermal properties during the operation of the fuses under nominal (100 A) and custom conditions (110 and 120 A) are the main focus of the analyses that were conducted. The work concerns both the outside elements of the fuse link (ceramic body) and the elements inside (current circuit). Both the distribution of the electric current and its impact on the temperature of the construction parts of the fuses during their operating mode have been described. Temperature distribution, power losses and energy dissipation were measured using a numerical model. In order to verify and validate the model, two independent teams of scientists executed experimental research, during which the temperature was measured on different parts of the device involving the rated current. Finally, the two sets of results were put together and compared with those obtained from the simulation tests. A possible significant correlation between the results of the empirical tests and the simulation work was highlighted.


Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki

This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.


2021 ◽  
Author(s):  
Haowen Li ◽  
huachao yang ◽  
Chenxuan Xu ◽  
Jianhua Yan ◽  
Kefa Cen ◽  
...  

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