scholarly journals Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki
Keyword(s):  
Thermal Properties ◽  
Measurement Error ◽  
Thermal Model ◽  
Bipolar Transistor ◽  
Internal Temperature ◽  
Self Heating ◽  
Factors Influencing ◽  
Proposed Model ◽  
The Common ◽  
Transient Thermal

This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.

Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Circuit World ◽  
2017 ◽  
Vol 43 (1) ◽  
pp. 38-42 ◽  
Author(s):  
Krzysztof Górecki ◽  
Damian Bisewski ◽  
Janusz Zarębski ◽  
Ryszard Kisiel ◽  
Marcin Myśliwiec
Keyword(s):  
Silicon Carbide ◽  
Design Methodology ◽  
Schottky Diodes ◽  
Semiconductor Materials ◽  
Thermal Coupling ◽  
Internal Temperature ◽  
Content Type ◽  
Self Heating ◽  
The Common ◽  
Transient Thermal

Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

scholarly journals A Lumped Transient Thermal Model for Self-Heating in Mosfets.(Dept.M)

2021 ◽  
Vol 25 (2) ◽  
pp. 46-58
Author(s):  
Mohamed Sabry ◽  
W. Fikry ◽  
Kh. Abdel Salam ◽  
A. Nasser ◽  
Mohamed Awad
Keyword(s):  
Thermal Model ◽  
Self Heating ◽  
Transient Thermal

scholarly journals Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3033 ◽  
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki
Keyword(s):  
Steady State ◽  
Integrated Circuit ◽  
Good Accuracy ◽  
Bipolar Transistor ◽  
Transistor Switch ◽  
Insulated Gate Bipolar Transistor ◽  
Self Heating ◽  
Proposed Model ◽  
Rapid Switching ◽  
Averaged Model

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.

scholarly journals Modelling thermal properties of large LED modules

2019 ◽  
Vol 37 (4) ◽  
pp. 628-638 ◽  
Author(s):  
Przemysław Ptak ◽  
Krzysztof Górecki ◽  
Barbara Dziurdzia
Keyword(s):  
Thermal Properties ◽  
Temperature Distribution ◽  
Power Dissipation ◽  
Thermal Model ◽  
Parameters Estimation ◽  
Internal Temperature ◽  
Practical Usefulness ◽  
Good Agreement

AbstractIn this paper a problem of modelling thermal properties of large LED modules is considered. The compact thermal model of such modules is proposed. The form of this model is presented and a method of parameters estimation is described. The practical usefulness of this model is verified experimentally by comparing the results of calculations and measurements of internal temperature of selected LEDs included in LED modules. The modules were fabricated by Fideltronic, Poland and measurements of temperature distribution on the surface of the modules at selected variants of power dissipation were performed at the Gdynia Maritime University. Good agreement between the results of measurements and modelling was obtained.

A lumped transient thermal model for self-heating in MOSFETs

2001 ◽  
Vol 32 (10-11) ◽  
pp. 847-853 ◽  
Author(s):  
M.N. Sabry ◽  
W. Fikry ◽  
Kh. Abdel Salam ◽  
M.M. Awad ◽  
A.E. Nasser
Keyword(s):  
Thermal Model ◽  
Self Heating ◽  
Transient Thermal

scholarly journals Compact Thermal Model of the Pulse Transformer Taking into Account Nonlinearity of Heat Transfer

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2766 ◽  
Author(s):  
Krzysztof Górecki ◽  
Kalina Detka ◽  
Krzysztof Górski
Keyword(s):  
Heat Transfer ◽  
Thermal Model ◽  
Pulse Transformer ◽  
Model Parameters ◽  
Electric Network ◽  
Self Heating ◽  
The Core ◽  
Proposed Model ◽  
Component Temperature ◽  
Good Agreement

This paper presents a compact nonlinear thermal model of pulse transformers. The proposed model takes into account differentiation in values of the temperatures of a ferromagnetic core and each winding. The model is formulated in the form of an electric network realising electrothermal analogy. It consists of current sources representing power dissipated in the core and in each of the windings, capacitors representing thermal capacitances and controlled current sources modelling the influence of dissipated power on the thermal resistances in the proposed model. Both self-heating phenomena in each component of the transformer and mutual thermal couplings between each pair of these components are taken into account. A description of the elaborated model is presented, and the process to estimate the model parameters is proposed. The proposed model was verified experimentally for different transformers. Good agreement between the calculated and measured waveforms of each component temperature of the tested pulse transformers was obtained. Differences between the results of measurements and calculations did not exceed 9% for transformers with a toroidal core and 13% for planar transformers.

GENETIC FACTORS INFLUENCING THE COMMON NEUROBIOLOGICAL SUBSTRATE FOR MENTAL DISORDERS

2019 ◽  
Vol 29 ◽  
pp. S798
Author(s):  
Till Andlauer ◽  
Thomas Mühleisen ◽  
Felix Hoffstaedter ◽  
Alexander Teumer ◽  
Anja Teuber ◽  
...  
Keyword(s):  
Mental Disorders ◽  
Genetic Factors ◽  
Factors Influencing ◽  
The Common

scholarly journals Research of reliability and efficiency of technological processes of mechanical assembly production on the basis of the common semi-Markov model

2018 ◽  
Vol 224 ◽  
pp. 01138
Author(s):  
Yuri Rapatskiy ◽  
Mikhail Zamorenov ◽  
Vadim Kopp ◽  
Yuri Obzherin ◽  
Vladimir Gusev ◽  
...  
Keyword(s):  
Distribution Functions ◽  
Mechanical Assembly ◽  
Renewal Equations ◽  
Technological Processes ◽  
Threaded Connections ◽  
Proposed Model ◽  
The Common ◽  
Semi Markov Processes ◽  
Simulation Parameters ◽  
Assembly Production

In the article a common semi-Markov mathematical model is considered that allows one to investigate the productivity and reliability of various technological processes of mechanical assembly production. The proposed model allows to study, inter alia, technological processes of manufacturing parts with screw and assemblies of threaded connections. Mathematical apparatus of the research is the theory of semi-Markov processes with a common phase space, which operates with a common kind of random variables distribution functions. If the considering process in the system is a subsystem located on a higher level of hierarchy, the hierarchical model for compatibility with each other levels as output simulation parameters required distribution functions. In the proposed model, based on the decision of the Markov renewal equations depend not only on the torque characteristics, but also the distribution function of time per unit of output service according to different kinds of undervalued failures.

Transient thermal properties of high-power diode laser bars

2007 ◽  
Author(s):  
Mathias Ziegler ◽  
Fritz Weik ◽  
Jens W. Tomm ◽  
Thomas Elsaesser ◽  
Wlodzimierz Nakwaski ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Diode Laser ◽  
High Power ◽  
Transient Thermal ◽  
Power Diode ◽  
High Power Diode Laser

Structural diversity of salts of terpyridine derivatives with europium(III) located in both, cation and anion, in comparison to molecular complexes

2020 ◽  
Vol 235 (8-9) ◽  
pp. 353-363
Author(s):  
Alexander E. Sedykh ◽  
Robin Bissert ◽  
Dirk G. Kurth ◽  
Klaus Müller-Buschbaum
Keyword(s):  
Thermal Properties ◽  
Crystal Packing ◽  
Side Reaction ◽  
Molecular Complexes ◽  
Structural Diversity ◽  
Organic Ligands ◽  
Ionic Complexes ◽  
Structural Variability ◽  
Dimeric Complexes ◽  
The Common

AbstractThree salts of the common composition [EuCl2(X-tpy)2][EuCl4(X-tpy)]·nMeCN were obtained from EuCl3·6H2O and the respective organic ligands (X-tpy = 4′-phenyl-2,2′:6′,2″-terpyridine ptpy, 4′-(pyridin-4-yl)-2,2′:6′,2″-terpyridine 4-pytpy, and 4′-(pyridin-3-yl)-2,2′:6′,2″-terpyridine 3-pytpy). These ionic complexes are examples of salts, in which both cation and anion contain Eu3+ with the same organic ligands and chlorine atoms coordinated. As side reaction, acetonitrile transforms into acetamide resulting in the crystallization of the complex [EuCl3(ptpy)(acetamide)] (4). Salts [EuCl2(ptpy)2][EuCl4(ptpy)]·2.34MeCN (1), [EuCl2(4-pytpy)2][EuCl4(4-pytpy)]·0.11MeCN (2), and [EuCl2(3-pytpy)2][EuCl4(3-pytpy)]·MeCN (3) crystallize in different structures (varying in space group and crystal packing) due to variation of the rear atom of the ligand to a coordinative site. Additionally, we show and compare structural variability through the dimeric complexes [Eu2Cl6(ptpy)2(N,N′-spacer)]·N,N′-spacer (5, 6, 7) obtained from [EuCl3(ptpy)(py)] by exchanging the end-on ligand pyridine with several bipyridines (4,4′-bipyridine bipy, 1,2-bis(4-pyridyl)ethane bpa, and 1,2-bis(2-pyridyl)ethylene bpe). In addition, photophysical (photoluminescence) and thermal properties are presented.

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