scholarly journals Charged particle detectors made from thin layers of amorphous silicon

1986 ◽  
Author(s):  
J.R. Morel
Keyword(s):  
Charged Particle ◽  
Amorphous Silicon ◽  
Thin Layers ◽  
Particle Detectors

scholarly journals Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane

1995 ◽  
Vol 42 (4) ◽  
pp. 240-246 ◽  
Author(s):  
W.S. Hong ◽  
A. Mireshghi ◽  
J.S. Drewery ◽  
T. Jing ◽  
Y. Kitsuno ◽  
...  
Keyword(s):  
Charged Particle ◽  
Amorphous Silicon ◽  
High Quality ◽  
Particle Detectors ◽  
Helium Dilution

On the laser calibration of charged particle detectors

2000 ◽  
Vol 43 (4) ◽  
pp. 470-480
Author(s):  
E. M. Gushchin ◽  
S. V. Somov
Keyword(s):  
Charged Particle ◽  
Particle Detectors ◽  
Laser Calibration

scholarly journals Longitudinal Tension and Mechanical Stability of a Pressurized Straw Tube

Instruments ◽  
2018 ◽  
Vol 2 (4) ◽  
pp. 27
Author(s):  
Levan Glonti ◽  
Temur Enik ◽  
Vladimir Kekelidze ◽  
Alexander Kolesnikov ◽  
Dmitry Madigozhin ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Charged Particle ◽  
Measurement Technique ◽  
Mechanical Stability ◽  
Stability Conditions ◽  
Particle Detectors ◽  
Straw Tube ◽  
Special Measurement ◽  
The Stability ◽  
Tube Study

For the development of charged particle detectors based on straw tubes operating in vacuum, a special measurement technique is required for the evaluation of their mechanical properties. A summary of the known equations that govern straw behavior under internal pressure is provided, and a new experimental method of a strained pressurized straw tube study is presented in this paper. The Poisson’s ratio of the straw wall, which defines the stability conditions of a built-in tube, was measured for the NA62 spectrometer straw, and its minimum pre-tension was estimated.

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

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