Особенности МДП-структур на основе изолирующих пленок PbSnTe : In с составом вблизи инверсии зон, обусловленные их сегнетоэлектрическими свойствами
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The characteristics of MIS structures based on insulating PbSnTe:In films with compositions in the vicinity of a band inversion grown by molecular beam epitaxy (MBE) were studied. It has been shown that a number of their features can be caused by a ferroelectric phase transition with a Curie temperature in the range T ≈ 15–20 K.
2020 ◽
Vol 8
(17)
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pp. 5868-5872
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2011 ◽
Vol 130-134
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pp. 2809-2812
2017 ◽
Vol 43
(8)
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pp. 6417-6424
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