scholarly journals Рост концентрации носителей заряда в тонких пленках висмута

2022 ◽  
Vol 56 (2) ◽  
pp. 149
Author(s):  
Е.В. Демидов ◽  
В.М. Грабов ◽  
В.А. Комаров ◽  
А.В. Суслов ◽  
В.А. Герега ◽  
...  
Keyword(s):  
Free Path ◽  
Charge Carriers ◽  
Bismuth Films

The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77K under the two-band approximation and the assumption that the charge carriers free path in the film is isotropic.

Wirkung von Phononen, die durch Alpha- Strahlen erzeugt werden, auf schwach gebundene Ladungsträger / Release of trapped charge carriers by phonons generated by alpha-particles

1973 ◽  
Vol 28 (6) ◽  
pp. 1040-1041 ◽  
Author(s):  
N. Riehl ◽  
A. Müller ◽  
R. Wengert
Keyword(s):  
Free Path ◽  
Alpha Particle ◽  
Low Temperatures ◽  
Alpha Particles ◽  
Charge Carriers ◽  
Phonon Density ◽  
Trapped Charge

It was shown in previous papers that trapped charge carriers can be used at low temperatures for detection and free path determination of single phonons. Using this method it is shown now that because of the high phonon density of a phonon pulse generated by one alpha-particle the action of such phonons on trapped charge carriers is mostly a multiphonon action so that the carriers can be released from trap depths which are much greater than the energy of a single phonon. Because of the great free paths of phonons at low temperatures this action can take place in distances up to 1 mm from the path of the alpha-particle itself.

scholarly journals Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2010
Author(s):  
Elena S. Makarova ◽  
Anastasiia S. Tukmakova ◽  
Anna V. Novotelnova ◽  
Vladimir A. Komarov ◽  
Vasilisa A. Gerega ◽  
...  
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
Mica Substrate ◽  
Sensing Applications ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Bismuth Films ◽  
Evaporation Technique ◽  
Zone Recrystallization

We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.

Detector strategies for environmental scanning electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1296-1297
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Vacuum ◽  
Environmental Scanning Electron Microscopy ◽  
Charge Carriers ◽  
Environmental Scanning ◽  
Surface Information ◽  
X Ray ◽  
Detector Electrode ◽  
Electrons And Ions ◽  
Low Energy Electrons ◽  
Environmental Sem

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.

Direct imaging of charge transfer

1996 ◽  
Vol 54 ◽  
pp. 680-681
Author(s):  
Yimei Zhu ◽  
J. Tafto
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Scattering Amplitude ◽  
High Temperature Superconductors ◽  
Charge Carriers ◽  
Image Charge ◽  
Net Charge ◽  
Long Time ◽  
Electron Holes ◽  
First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

Inelastic mean free path and phase-shift determinations in NiO, using EXELFS

1993 ◽  
Vol 3 (7) ◽  
pp. 1649-1659
Author(s):  
Mohammad A. Tafreshi ◽  
Stefan Csillag ◽  
Zou Wei Yuan ◽  
Christian Bohm ◽  
Elisabeth Lefèvre ◽  
...  
Keyword(s):  
Phase Shift ◽  
Free Path ◽  
Mean Free Path ◽  
Inelastic Mean Free Path
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