scholarly journals Люминесценция примесных Ce-=SUP=-3+-=/SUP=- центров в кристаллах KH-=SUB=-2-=/SUB=-PO-=SUB=-4-=/SUB=-:Ce

2018 ◽  
Vol 60 (1) ◽  
pp. 145
Author(s):  
В.А. Пустоваров ◽  
И.Н. Огородников ◽  
С.И. Омельков

AbstractThe photoluminescence, X-ray luminescence, and cathodoluminescence spectra of KH_2PO_4 : Ce single crystals contain a nonelementary band of radiation with an energy of 3.55 eV and decay time of 27–33 ns. It is formed by fast radiative interconfiguration d → f transitions between the excited and ground states of Ce^3+ ions, with the ground state is split by a crystalline field. In the range of concentrations studied (0.5–3 × 10^–2 wt %), Ce3+ ions enter the KH_2PO_4 : Ce crystal lattice as substitution ions. Local charge compensation takes place by means of defects in the crystal structure that cause luminescence with a large Stokes shift in the region of 2.4–2.2 eV. The presence of hydrogen sublattice defects decreases the efficiency of energy transport by free charge carriers to the luminescent centers. The interaction of defects and impurity centers manifests itself as a slow inertial building-up of the stationary X-ray luminescence yield of Ce^3+ centers.

1993 ◽  
Vol 88 (8) ◽  
pp. 619-621 ◽  
Author(s):  
A. Watterich ◽  
O.R. Gilliam ◽  
L.A. Kappers

2009 ◽  
Vol 15 (S2) ◽  
pp. 332-333
Author(s):  
H Schulz ◽  
U Zeile ◽  
JP Stodolka ◽  
D Kraft

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


2015 ◽  
Vol 17 (26) ◽  
pp. 16744-16751 ◽  
Author(s):  
Wenxing Yang ◽  
Meysam Pazoki ◽  
Anna I. K. Eriksson ◽  
Yan Hao ◽  
Gerrit Boschloo

Photo-induced absorption spectroscopy on dye-sensitized solar cells reveals reversible electron-induced cation adsorption at the TiO2 surface, resulting in changes of the surface electric field.


2014 ◽  
Vol 41 (5) ◽  
pp. 347-359 ◽  
Author(s):  
Haohao Yi ◽  
Etienne Balan ◽  
Christel Gervais ◽  
Loïc Ségalen ◽  
Marc Blanchard ◽  
...  

2019 ◽  
Vol 9 (15) ◽  
pp. 3054 ◽  
Author(s):  
Zeheng Wang ◽  
Zhenwei Zhang ◽  
Shengji Wang ◽  
Chao Chen ◽  
Zirui Wang ◽  
...  

In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.


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