scholarly journals Температурная зависимость чувствительности кремниевых фотоумножителей в режиме пофотонной регистрации ультрафиолетового излучения

2021 ◽  
Vol 91 (5) ◽  
pp. 821
Author(s):  
А.А. Богданов ◽  
Ю.В. Тубольцев ◽  
Ю.В. Чичагов ◽  
Е.Е. Холупенко ◽  
А.М. Красильщиков
Keyword(s):  
Count Rate ◽  
Gamma Ray ◽  
Dark Count ◽  
Photon Detection ◽  
Readout Electronics ◽  
Avalanche Photodetectors ◽  
Dark Count Rate ◽  
Front End ◽  
Temperature Dependences ◽  
Gamma Ray Telescopes

In the context of the development of a new detecting camera for the Cherenkov gamma-ray telescope TAIGA-IACT, the temperature dependences of the dark count rate and the efficiency of ultraviolet photon detection of two silicon avalanche photodetectors: OnSemi / SensL MicroFJ-60035 and Hamamatsu VUV4 S13371-6050CQ-02 at a wavelength of 277 nm were experimentally investigated. It is shown that the main characteristics of these detectors correspond to those declared by the manufacturers. Front-end readout electronics was developed and tested. Conclusions are drawn about the applicability of such detectors in the detecting cameras of Cherenkov gamma-ray telescopes.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

Soliton Pulse Gated InGaAs/InP Avalanche Photodiode for Low Dark Count Rate Single Photon Detection

2017 ◽  
Author(s):  
Ahmed C. Kadhim ◽  
Susan K Earles ◽  
Muhammad Riaz ◽  
Ahmad S. Azzahrani ◽  
Mano Rahul K Pakalapati
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Soliton Pulse

Quenching Circuit of Avalanche Diodes for Single Photon Detection

2013 ◽  
Vol 437 ◽  
pp. 1073-1076
Author(s):  
Qing Yao Xu ◽  
Hong Pei Wang ◽  
Xiang Chao Hu ◽  
Hai Qian ◽  
Ying Cheng Peng ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Free Running ◽  
Single Photon Avalanche Diodes ◽  
Running Mode

To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

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