scholarly journals Определение профиля состава квантовых ям HgTe/Cd-=SUB=-x-=/SUB=-Hg-=SUB=-1-x-=/SUB=-Te методом одноволновой эллипсометрии

2019 ◽  
Vol 127 (8) ◽  
pp. 318
Author(s):  
В.А. Швец ◽  
Н.Н. Михайлов ◽  
Д.Г. Икусов ◽  
И.Н. Ужаков ◽  
С.А. Дворецкий
Keyword(s):  
Quantum Wells ◽  
Mercury Cadmium Telluride ◽  
Optical Constants ◽  
Wide Band ◽  
Inhomogeneous Layer ◽  
Composition Distribution ◽  
Composition Profiles ◽  
High Repeatability ◽  
Ellipsometric Method

An ellipsometric method for reconstruction of the composition profile throughout the thickness in thin mercury-cadmium-telluride nanostructures grown by MBE has been developed. The method is based on ellipsometric data, measured during structure growth and following solution of the inverse ellipsometric problem. For this, a replacement of a part of the inhomogeneous layer by a homogeneous substrate with specially chosen optical constants has been done. Numerical simulation showed the correctness of such replacement and the efficiency of the developed algorithm. Using this method, the active region of the heterostructure consisting of five HgTe quantum wells separated by wide-band CdHgTe spacers has been studied. Using the results of continuous measurements of ellipsometric parameters obtained in situ during structure growth, the composition profiles for all five sequentially grown quantum wells was determined. A high repeatability of the composition distribution through the thickness is shown.

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

Structural Quality And Electrical Behavior Of Epitaxial High-κ Y2O3 / Si(001)

2002 ◽  
Vol 745 ◽  
Author(s):  
G. Vellianitis ◽  
G. Apostolopoulos ◽  
A. Dimoulas ◽  
K. Argyropoulos ◽  
B. Mereu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Wide Band ◽  
Amorphous Layer ◽  
Ex Situ ◽  
Structural Quality ◽  
Wide Band Gap ◽  
Annealing Temperatures ◽  
Grown Sample ◽  
Transistor Fabrication

ABSTRACTY2O3 thin films were grown directly on Si (001) by MBE and annealed in-situ under UHV at various annealing temperatures. The samples were investigated in-situ by RHEED and ex-situ by HRTEM. A 7 to 15 Å thick non-uniform interfacial amorphous layer is observed in the as-grown sample. After annealing at 490°C under UHV for 30 minutes the amorphous layer is reduced and a sharp Y2O3/Si interface is obtained. At higher annealing temperatures, YSi2 islands start to form at the Y2O3/Si interface. I-V measurements performed on generic MIS structures show that the annealed samples exhibit higher leakage current density than the as-grown sample, due to reduction of the wide band gap interfacial layer. Leakage current densities in annealed samples remain below 1A/cm2, which is acceptable for future high-κ transistor fabrication.

(Invited) Porous Silicon Dissolution Monitoring and Optical Constants Measurement Using in Situ Photoconduction in HF

2016 ◽  
Vol 75 (1) ◽  
pp. 63-75
Author(s):  
B. Gelloz ◽  
K. Ichimura ◽  
H. Fuwa ◽  
E. Kondoh ◽  
L. Jin
Keyword(s):  
Porous Silicon ◽  
Optical Constants ◽  
Silicon Dissolution

Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2184-2188 ◽  
Author(s):  
T. Lacrevaz ◽  
B. Fléchet ◽  
A. Farcy ◽  
J. Torres ◽  
M. Gros-Jean ◽  
...  
Keyword(s):  
Wide Band ◽  
High Permittivity ◽  
Band Frequency ◽  
Integrated Passives ◽  
High K

Optimization of Maximum VO2 Content in Polymorphous Oxides of Vanadium

2013 ◽  
Vol 538 ◽  
pp. 113-116 ◽  
Author(s):  
S.N. Svitasheva
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Constants ◽  
Ellipsometric Method

Optical properties of thin films of vanadium thermally oxidized at air were studied by ellipsometric method using wavelength of He-Ne laser. Multipart composition of these films was revealed and method of optimization of technological conditions based on dynamic of changing optical constants near 68°C was developed.

Cathodoluminescence Microanalysis of Electron Irradiation Damage in Wide Band Gap Materials

1998 ◽  
Vol 540 ◽  
Author(s):  
M.A. stevens Kalceff ◽  
M.R. Phillips ◽  
M. Toth ◽  
A.R. Moon ◽  
D.N. Jamieson ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Depth Resolution ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Wide Band Gap ◽  
Energetic Radiation ◽  
Defect Species

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.

Sign in / Sign up

Export Citation Format

Share Document