Cathodoluminescence Microanalysis of Electron Irradiation Damage in Wide Band Gap Materials

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.

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Phase control for indium oxide nanoparticles

Nanoscale ◽

10.1039/d0nr08587a ◽

2021 ◽

Vol 13 (7) ◽

pp. 4038-4050

Author(s):

Ida Gjerlevsen Nielsen ◽

Sanna Sommer ◽

Bo Brummerstedt Iversen

Keyword(s):

Band Gap ◽

Wide Band ◽

Oxide Nanoparticles ◽

Wide Band Gap ◽

X Ray ◽

X Ray Scattering ◽

Transformation Mechanisms ◽

Indium Oxides ◽

Wide Band Gap Semiconductors

The indium oxides, c-In2O3, h-In2O3, InOOH and In(OH)3, have been studied by in situ X-ray scattering to determine the formation and transformation mechanisms in this system of important wide band gap semiconductors.

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Detection of Interstitial Molecules in Wide Band Gap Materials Using Cathodoluminescence Microanalysis

Microscopy and Microanalysis ◽

10.1017/s1431927600016986 ◽

1999 ◽

Vol 5 (S2) ◽

pp. 732-733

Author(s):

M.A. Stevens Kalceff

Keyword(s):

Electron Beam ◽

Band Gap ◽

Indirect Evidence ◽

Analytical Techniques ◽

Wide Band ◽

In Situ Monitoring ◽

Wide Band Gap ◽

Special Cases ◽

Induced Defects ◽

Irradiation Induced Defects

Cathodoluminescence (CL) microanalysis (spectroscopy and microscopy) enables both pre-existing and irradiation induced defects in the bulk and surface defect structure of wide band gap materials (i.e. semiconductors and insulators) to be monitored and characterized with high spatial resolution and sensitivity. The local micro-volume of specimen may be selected for investigation by varying the electron beam parameters. CL micro analytical techniques allow the in situ monitoring of electron irradiation induced defects and the investigation of irradiation induced electromigration of mobile charged defect species. Irradiation can result in the formation of defects and /or the transformation of existing defect precursors. CL emissions from a material are usually associated with native and impurity defects of the host lattice, however in special cases CL microanalysis can provide direct or indirect evidence for the presence of interstitial molecular species in a material. Atomic displacements from the normal bonding (i.e. defect free) sites induced by an electron beam can result from either knock-on, or radiolytic processes, depending on the incident electron beam energy.

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In-situ Characterization of As-grown Surface of CIGS Films

MRS Proceedings ◽

10.1557/proc-1012-y03-01 ◽

2007 ◽

Vol 1012 ◽

Cited By ~ 2

Author(s):

Hirotake Kashiwabara ◽

Shimpei Teshima ◽

Kazuya Kikunaga ◽

Kazunori Takeshita ◽

Tetsuji Okuda ◽

...

Keyword(s):

Band Gap ◽

High Performance ◽

Identical Condition ◽

Cell Structure ◽

Wide Band ◽

Surface Region ◽

Valence Band Maximum ◽

Wide Band Gap

AbstractIn-situ characterization of composition, electronic structure and their depth profiles of surface of Cu(In1-xGax)Se2 (CIGS) film grown by three stage co-evaporation has been carried out by means of photoemission and inverse photoemission spectroscopy (PES/IPES), for the purpose of investigating the formation mechanism of the CIGS-side wide band-gap region adjacent to CBD-CdS/CIGS interface in cell structure. Sample-transportation in vacuum below 1 x 10-8 Torr yielded almost contamination-free feature of the CIGS surface. The as-transferred surface of Cu0.93(In0.65Ga0.35)Se2 grown at the identical condition for the high performance solar cell exhibited seriously Cu and Ga deficient composition. Chemical formula of this region was inbetween Cu : (In+Ga): Se = 1 : 3 : 5 and 1 : 5 : 8. In-situ UPS/IPES measurements CIGS showed that the as-grown surface region of the CIGS already had expanded band gap energy up to 1.4 eV and n-type character. A gradual decrease of band energy and a rise of valence band maximum as a function of depth from the original surface were observed. These results have revealed that the surface of CIGS by the three stage method already has the wide band gap, which might originate in so-called Cu-vacancy ordered phase.

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Investigation of Irradiation Damage in Silicon Dioxide Polymorphs using Cathodoluminescence Microanalysis.

MRS Proceedings ◽

10.1557/proc-650-r9.5/o14.5 ◽

2000 ◽

Vol 650 ◽

Author(s):

Marion A. Stevens-Kalceff

Keyword(s):

Silicon Dioxide ◽

Surface Topography ◽

Electron Irradiation ◽

Defect Structure ◽

High Sensitivity ◽

Wide Band ◽

In Situ Monitoring ◽

Irradiation Damage ◽

Borosilicate Glasses ◽

Pure Silica

ABSTRACTCathodoluminescence (CL) Microanalysis (spectroscopy and microscopy) provides unique high sensitivity, high spatial resolution information about the defect structure and distribution of defects in wide band gap materials and therefore is an ideal technique with which to investigate the microstructural processes induced by irradiation. CL microanalytical techniques allow the in situ monitoring and post irradiation assessment of electron irradiation induced damage. Changes in the defect structure and surface topography of electron irradiated silicon dioxide polymorphs and related silicates including pure crystal quartz, pure silica glasses, pure amorphous fused quartz and alkali-borosilicate glasses, have been investigated and compared using CL microanalysis and Scanning Probe Microscopy (SPM) techniques. CL and SPM evidence shows all specimens are sensitive to electron irradiation. CL evidence is consistent with the production and micro-segregation of irradiation induced defects. The observed damage is highly correlated with the electron irradiation induced changes in the surface topography of the investigated specimens.

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Investigation of Irradiation Damage in Silicon Dioxide Polymorphs using Cathodoluminescence Microanalysis.

MRS Proceedings ◽

10.1557/proc-647-o14.5/r9.5 ◽

2000 ◽

Vol 647 ◽

Author(s):

Marion A. Stevens-Kalceff

Keyword(s):

Silicon Dioxide ◽

Surface Topography ◽

Electron Irradiation ◽

Defect Structure ◽

High Sensitivity ◽

Wide Band ◽

In Situ Monitoring ◽

Irradiation Damage ◽

Borosilicate Glasses ◽

Pure Silica

AbstractCathodoluminescence (CL) Microanalysis (spectroscopy and microscopy) provides unique high sensitivity, high spatial resolution information about the defect structure and distribution of defects in wide band gap materials and therefore is an ideal technique with which to investigate the microstructural processes induced by irradiation. CL microanalytical techniques allow the in situ monitoring and post irradiation assessment of electron irradiation induced damage. Changes in the defect structure and surface topography of electron irradiated silicon dioxide polymorphs and related silicates including pure crystal quartz, pure silica glasses, pure amorphous fused quartz and alkali-borosilicate glasses, have been investigated and compared using CL microanalysis and Scanning Probe Microscopy (SPM) techniques. CL and SPM evidence shows all specimens are sensitive to electron irradiation. CL evidence is consistent with the production and micro-segregation of irradiation induced defects. The observed damage is highly correlated with the electron irradiation induced changes in the surface topography of the investigated specimens.

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Unravelling the complex formation mechanism of HfO2 nanocrystals using in situ Pair Distribution Function Analysis

Nanoscale ◽

10.1039/d1nr03044b ◽

2021 ◽

Author(s):

Rasmus S Christensen ◽

Magnus Kløve ◽

Martin Roelsgaard ◽

Sanna Sommer ◽

Bo Brummerstedt Iversen

Keyword(s):

Distribution Function ◽

Complex Formation ◽

Band Gap ◽

Formation Mechanism ◽

Pair Distribution Function ◽

Function Analysis ◽

Wide Band ◽

Wide Band Gap

Hafnia, HfO2, which is a wide band gap semiconducting oxide, is much less studied than the chemically similar zirconia (ZrO2). Here, we study the formation of hafnia nanocrystals from hafnium...

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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