Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors
Keyword(s):
Ex Situ
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ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.
2006 ◽
Vol 296
(2)
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pp. 129-134
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Keyword(s):
2008 ◽
Vol 39
(4)
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pp. 865-874
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2008 ◽
Vol 26
(3)
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pp. 1049
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Keyword(s):
2008 ◽
Vol 310
(11)
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pp. 2906-2914
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2003 ◽
Vol 52
(3)
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pp. 295-303
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Keyword(s):
2017 ◽
Vol 2017
(1)
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pp. 000280-000285
2002 ◽
Vol 237-239
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pp. 998-1002
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