scholarly journals Исследование методов пассивации и защиты каскадных солнечных элементов

2020 ◽  
Vol 46 (19) ◽  
pp. 35
Author(s):  
А.В. Малевская ◽  
Д.А. Малевский ◽  
П.В. Покровский ◽  
В.М. Андреев
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Mesa Structure ◽  
Multijunction Solar Cells ◽  
Structure Surface ◽  
Nitride Layers

Carried out were investigations of methods for passivating and protecting p-n junctions in points of their exit on the side mesa structure surface and for sealing hermetically multijunction solar cells based on the GaInP/GaAs/Ge heterostructure. Study of protecting coatings based on silicon nitride layers and on silicone by analyzing dark I-V characteristics of solar cells and by estimating the electroluminescence distribution has been performed.

scholarly journals К 125-летию со дня рождения лауреата Нобелевской премии академика Николая Николаевича Семенова Архитектура мезы и эффективность InGaP/Ga(In)As/Ge солнечных элементов

2021 ◽  
Vol 91 (7) ◽  
pp. 1067
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Е.А. Гребенщикова ◽  
В.М. Андреев
Keyword(s):  
Solar Cells ◽  
Side Surface ◽  
Single Step ◽  
Diffusion Region ◽  
Mesa Structure ◽  
Photoresist Mask ◽  
Multijunction Solar Cells ◽  
Mechanical Separation

It has been shown that the mesa architecture and achieved quality of the mesa sidewall of concentrator multijunction solar cells ensured increasing their efficiency up to 36.7% at the sunlight concentration before 100 (AMO; 0.136W/cm²). Creation of the mesa structure architecture with following separation of epitaxial plates of monolithic InGaP/GaAs/Ge nanoheterostructure into chips was carried out by single step chemical wet etching in the HBr:H2O2:H2O (8:1:100) through a photoresist mask to the depth of 12-18µm. Conditions of single step etching, which ensure formation of a smooth and even side surface of the InGaP/Ga(In)As/Ge nanoheterostructure mesa containing different in composition and thickness layers have been determined. Determination of the activation energy has shown that etching occurs in the diffusion region of the heterogeneous process. In raising etchant temperature from 2 to 36˚C, a change of the tilt angle in the Ge substrate region from 4.5 to 25 angular degrees is observed, what allows optimizing the amount of concentrator solar cells and their quality at final mechanical separation of the epitaxial plate into chips.

Silicon nitride layers for DopLa-IBC solar cells

2017 ◽  
Author(s):  
Jesus A. Mendez ◽  
Isidro Martin ◽  
Gema Lopez ◽  
Pablo Ortega ◽  
Albert Orpella ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Nitride Layers

Contribution of the Luminescence Phenomena of nc-Si to the Performances of the Industrial mc-Si Solar Cells

2011 ◽  
Vol 324 ◽  
pp. 465-468
Author(s):  
Abdellatif Zerga ◽  
Kamila Benyelles
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Screen Printing ◽  
Silicon Solar Cells ◽  
Homogeneous Distribution ◽  
Hydrogenated Silicon ◽  
Si Solar Cells ◽  
Absolute Efficiency ◽  
Nitride Layers ◽  
P Type

In this study, we attempt the contribution of the silicon nanocrystal nc-Si luminescence phenomena to the performance of the conventional mc-Si solar cells. These nc-Si are embedded in the hydrogenated silicon nitride dielectric layers. The experimental results are obtained by different characterizations. They show that the optimum temperature is around 720°C with a good homogeneous distribution of nc-Si (3-5nm). However, to validate our results on silicon solar cells, we deposited silicon-rich silicon nitride layers on p-type (0.5ohm.cm) and diffused POCl3(40ohm/sq) substrates. Then, we performed thermal annealing at 720°C under mixture of gas (N2/H2) during one hour. The I-V measurements are carried out after the screen printing metallization and they showed 0.4% increase of the absolute efficiency.

scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array

2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanoparticle Array ◽  
Pd Nanoparticle ◽  
Multijunction Solar Cells
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