Silicon nitride layers for DopLa-IBC solar cells

2020 ◽

Vol 46 (19) ◽

pp. 35

Author(s):

А.В. Малевская ◽

Д.А. Малевский ◽

П.В. Покровский ◽

В.М. Андреев

Keyword(s):

Solar Cells ◽

Silicon Nitride ◽

Mesa Structure ◽

Multijunction Solar Cells ◽

Structure Surface ◽

Nitride Layers

Carried out were investigations of methods for passivating and protecting p-n junctions in points of their exit on the side mesa structure surface and for sealing hermetically multijunction solar cells based on the GaInP/GaAs/Ge heterostructure. Study of protecting coatings based on silicon nitride layers and on silicone by analyzing dark I-V characteristics of solar cells and by estimating the electroluminescence distribution has been performed.

Download Full-text

Contribution of the Luminescence Phenomena of nc-Si to the Performances of the Industrial mc-Si Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.465 ◽

2011 ◽

Vol 324 ◽

pp. 465-468

Author(s):

Abdellatif Zerga ◽

Kamila Benyelles

Keyword(s):

Solar Cells ◽

Silicon Nitride ◽

Screen Printing ◽

Silicon Solar Cells ◽

Homogeneous Distribution ◽

Hydrogenated Silicon ◽

Si Solar Cells ◽

Absolute Efficiency ◽

Nitride Layers ◽

P Type

In this study, we attempt the contribution of the silicon nanocrystal nc-Si luminescence phenomena to the performance of the conventional mc-Si solar cells. These nc-Si are embedded in the hydrogenated silicon nitride dielectric layers. The experimental results are obtained by different characterizations. They show that the optimum temperature is around 720°C with a good homogeneous distribution of nc-Si (3-5nm). However, to validate our results on silicon solar cells, we deposited silicon-rich silicon nitride layers on p-type (0.5ohm.cm) and diffused POCl3(40ohm/sq) substrates. Then, we performed thermal annealing at 720°C under mixture of gas (N2/H2) during one hour. The I-V measurements are carried out after the screen printing metallization and they showed 0.4% increase of the absolute efficiency.

Download Full-text

Screen printed titanium oxide and PECVD silicon nitride as antireflection coating on silicon solar cells

Renewable Energy ◽

10.1016/s0960-1481(97)00030-x ◽

1997 ◽

Vol 12 (2) ◽

pp. 131-135 ◽

Cited By ~ 19

Author(s):

Ram Kishore ◽

S.N. Singh ◽

B.K. Das

Keyword(s):

Solar Cells ◽

Silicon Nitride ◽

Titanium Oxide ◽

Antireflection Coating ◽

Silicon Solar Cells ◽

Screen Printed

Download Full-text

Kinetics of silicon nitride crystallization in N+-implanted silicon

Journal of Materials Research ◽

10.1557/jmr.1989.0394 ◽

1989 ◽

Vol 4 (2) ◽

pp. 394-398 ◽

Cited By ~ 5

Author(s):

V. S. Kaushik ◽

A. K. Datye ◽

D. L. Kendall ◽

B. Martinez-Tovar ◽

D. S. Simons ◽

...

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Crystalline Silicon ◽

Wafer Surface ◽

Amorphous Silicon Nitride ◽

Silicon Lattice ◽

Nitrogen Ions ◽

The Mean ◽

Nitride Layers ◽

Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Download Full-text