The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current–voltage characteristics

2007 ◽  
Vol 390 (1-2) ◽  
pp. 151-154 ◽  
Author(s):  
Fahrettin Yakuphanoglu ◽  
Burm-Jong Lee
Keyword(s):  
Interfacial Layer ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

2002 ◽  
Vol 719 ◽  
Author(s):  
I. Salama ◽  
N. R Quick ◽  
A. Kar ◽  
Gilyong Chung
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Electric Resistance ◽  
Current Voltage ◽  
Impurity Doping ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Sic Wafer ◽  
Conventional Annealing

AbstractHighly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

Optical and Electrical Characterization of Copper-and Chlorine-Doped Cadmium Zinc Telluride

1997 ◽  
Vol 487 ◽  
Author(s):  
J. E. Toney ◽  
B. A. Brunett ◽  
T. E. Schlesinger ◽  
E. Cross ◽  
F. P. Doty ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Collection ◽  
Detector Response ◽  
Induced Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Cadmium Zinc ◽  
Low Temperature Photoluminescence

AbstractWe have used low-temperature photoluminescence spectroscopy and photo-induced current transient spectroscopy to study the properties of copper-doped Cd1−xZnxTe with x=0.1 and chlorine-doped Cd1−xZnxTe with x=0.2, 0.35 and 0.5. The current-voltage characteristics and detector response were also measured. We observed variations in charge collection and resistivity in the Cu-doped samples which was correlated with variations in PICTS spectra. The Cl-doped material was found to have insufficient resistivity for detector operation.

Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 625-628 ◽  
Author(s):  
Fabio Bergamini ◽  
Francesco Moscatelli ◽  
Mariaconcetta Canino ◽  
Antonella Poggi ◽  
Roberta Nipoti
Keyword(s):  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Electrical Characterization ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Exponential Trend ◽  
Current Voltage Characteristics ◽  
Post Implantation

We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at –100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at –100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer.

The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction

e-Polymers ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 75-82
Author(s):  
Haci Ökkes Demir ◽  
Zakir Caldıran ◽  
Kadem Meral ◽  
Yılmaz Şahin ◽  
Murat Acar ◽  
...  
Keyword(s):  
Reverse Current ◽  
Electrical Characterization ◽  
Effect Of Temperature ◽  
Barrier Heights ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

AbstractA poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φb), ideality factor (η), reverse current (I0) and series resistance (Rs), were investigated. It was seen that the Φb and the I0 values of the device increased with increasing temperature, while the η and the Rs values decreased. The temperature dependences of the Φb and the η were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I0/T2) vs. 1/ηT plot, the values of the activation energy (Ea) and Richardson constant (A*) were calculated as 0.324 eV and 2.84×10-7 A cm-2K-2, respectively. The experimental value of the Rs from the forward current-voltage plots decreased with an increase in the temperature.

Characterization of Thin PtSI/p-Si Schottky Diodes

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Silverman ◽  
P. Pellegrini ◽  
J. Comer ◽  
A. Golvbovic ◽  
M. Weeks ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Current ◽  
Processing Parameters ◽  
Silicon Substrates ◽  
Unexpected Result ◽  
State Diffusion ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTA series of PtSi on p-type Si diodes have been characterized in order to establish correlations among processing parameters, metallurgical features and electrical properties. Characterization techniques include analytical (TED, TEM), electrical (current-voltage characteristics), and optical (photoemission and absorption). The fabrication techniques involve e-beam evaporation of platinum layers at UHV levels onto VLSI grade (100) p-type silicon substrates. The silicide layers are formed via sub-eutectic solid state diffusion at 350°C. The main trends with thickness as well as possible interrelationships are described. An unexpected result is the presence of unreacted polycrystalline Pt and Pt2Si at the interface.

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