scholarly journals Особенности зарождения и роста нитевидных нанокристаллов InGaN на подложках SiC/Si методом хлорид-гидридной эпитаксии

2022 ◽  
Vol 48 (4) ◽  
pp. 24
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
А.В. Редьков ◽  
В.М. Стожаров ◽  
Е.В. Убыйвовк ◽  
...  
Keyword(s):  
Film Growth ◽  
Growth Mechanisms ◽  
Screw Dislocations ◽  
Si Substrates ◽  
The Difference

The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000C). On substrates with orientations (110) and (111), the formation of InGaN nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations.

Crystallographic Study of The Initial Growth Region of μc-Si with Different Preferential Orientations

2005 ◽  
Vol 862 ◽  
Author(s):  
Y. Sobajima ◽  
T. Sugano ◽  
T. Kitagawa ◽  
T. Toyama ◽  
H. Okamoto
Keyword(s):  
Film Growth ◽  
Solid Phase ◽  
Photovoltaic Performance ◽  
Preferential Orientation ◽  
Initial Growth ◽  
Growth Mechanisms ◽  
Phase Growth ◽  
Growth Region ◽  
The Difference ◽  
Si Films

AbstractGrowth of microcrystalline silicon (μc-Si) thin films with different preferential orientations has been studied employing XRD measurements versus thickness. The focus of this study is on the influence of preferential orientation on the film growth process. The (220) preferential orientation and randomly oriented μc-Si films studied here were prepared by VHF-PECVD at 180 °C. The thickness evolution revealed that the crystallinity was improved in the μc-Si with (220) preferential orientation μc-Si particularly in the first 0.5-μm of growth, while that in the randomly oriented μc-Si was almost completely unchanged. The difference in the crystallinity in the initial growth region arises from a difference in the growth mechanisms. Specifically, the growth of μc-Si with (220) preferential orientation can be elucidated by a hybrid-phase mode consisting of vapor- and solid-phase growth, whereas the growth of randomly oriented μc-Si can be achieved only by vapor-phase growth as occurs conventionally. Based on the growth mechanisms, the microstructures of μc-Si with both orientations and their influence on the photovoltaic performance are discussed.

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

2. Adhesion of the plasma-polymerized fluorocarbon films to silicon substrates The adhesion properties of the plasma-polymerized FC coatings were determined by using a test, already employed by Yasuda and Sharma [13] (see Fig. 1 and Table 1) in which the silicon substrates coated with plasma FC-films were boiled in a0.9% sodium chloride solution. The FC thin films produced in the processes 1 and 2 were lifted after a very short time (15 minutes). Coatings generated in process 3 were lifted after the second cycle of boiling. The films produced in processes 4 and 5 withstood the complete test procedure. The results are shown in Fig. 3. The poor adhesion of the polymerized films in the first two processes is due to the fact that these processes do not involve a plasma pre-treatment process. The difference between processes 1 and 3 is only in the plasma pre-treatment (process 1 does not contain the pre-treatment step of the silicon surface). The fluorocarbon films deposited by processes 4 and 5 have shown the best adhesion. These test results indicate that the plasma pre-treatment is very important and necessary for a good adhesion of the FC coatings to the silicon surfaces. 2.3. Patterning of FC films 2.3.1. Patterning through resist mask. The patterning of the FC films through a photoresist mask (conventional All resist AR-P351) was examined after deposition for process No. 5. Different coating parameters were investigated to improve the adhesion of the resist to the FC surface. The best adhesion results were obtained using the process parameters, shown in Table 3. Differences in the thickness uniformity of so-deposited resists were in a range below 5%. The samples were etched in a pure oxygen plasma in an RIE-system after the lithography steps (pre-bake, exposure, development, post-bake). A resolution of 2 /xm was obtained. A significant increase in the surface energy was not observed after resist stripping. The sessile contact angle of water was 103°. 2.3.2. Lift-off process for patterning thin plasma polymerized FC films. A lift-off process was also examined to pattern the thin FC films. The lithography steps were used before the plasma polymerization process was carried out (Fig. 2). A standard resist AR-P351 was coated directly onto the Si substrates. After all lithography

2014 ◽  
pp. 275-278
Keyword(s):  
Treatment Process ◽  
Test Procedure ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Fluorocarbon Films ◽  
Si Substrates ◽  
Complete Test ◽  
The Difference ◽  
Pre Treatment ◽  
Lift Off

scholarly journals Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

2021 ◽  
Vol 2103 (1) ◽  
pp. 012098
Author(s):  
V V Lendyashova ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
R R Reznik ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Structural Properties ◽  
Si Substrates ◽  
Gan Nanowires ◽  
The Difference ◽  
Koh Etching

Abstract The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whereas the GaN NWs grown on inhibitor SiOx layer are removing. The effect is described by the difference in polarity between GaN NWs grown on a Si surface and NWs grown on a SiOx inhibitor layer.

scholarly journals Nonlinear continuum growth model of multiscale reliefs as applied to rigorous analysis of multilayer short-wave scattering intensity. I. Gratings

2013 ◽  
Vol 46 (4) ◽  
pp. 926-932 ◽  
Author(s):  
Leonid Goray ◽  
Maxim Lubov
Keyword(s):  
Wave Scattering ◽  
Film Growth ◽  
Boundary Integral Equations ◽  
Ion Beam ◽  
Integrated Approach ◽  
Short Wave ◽  
Boundary Integral ◽  
Si Substrates ◽  
Extreme Uv ◽  
Nonlinear Continuum

It is shown that taking into proper account certain terms in the nonlinear continuum equation of thin-film growth makes it applicable to the simulation of the surface of multilayer gratings with large boundary profile heights and/or gradient jumps. The proposed model describes smoothing and displacement of Mo/Si and Al/Zr boundaries of gratings grown on Si substrates with a blazed groove profile by magnetron sputtering and ion-beam deposition. Computer simulation of the growth of multilayer Mo/Si and Al/Zr gratings has been conducted. Absolute diffraction efficiencies of Mo/Si and Al/Zr gratings in the extreme UV range have been found within the framework of boundary integral equations applied to the calculated boundary profiles. It has been demonstrated that the integrated approach to the calculation of boundary profiles and of the intensity of short-wave scattering by multilayer gratings developed here opens up a way to perform studies comparable in accuracy to measurements with synchrotron radiation, at least for known materials and growth techniques.

Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates

2012 ◽  
Vol 717-720 ◽  
pp. 521-524 ◽  
Author(s):  
Ruggero Anzalone ◽  
M. Camarda ◽  
C. Locke ◽  
J. Carballo ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Film Growth ◽  
Raman Shift ◽  
Fundamental Parameter ◽  
Free Standing ◽  
Si Substrates ◽  
Shift Analysis ◽  
Hydrogen Carrier ◽  
The Impact

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as the C and Si precursors in hydrogen carrier gas. The film thickness was held constant at ~2.5 µm independent of the growth rate so as to allow for direct films comparison as a function of the growth rate. Supported by profilometry, Raman and micro-machined free-standing structures, this study shows that the growth rate is a fundamental parameter for low-defect and low-stress hetero-epitaxial growth process of 3C-SiC on Si substrates. Stress analysis performed by modify Stoney’s equation trough optical curvature measurement, Raman shift analysis and micro-machining of free-standing structures that shows apparent disagreement about the nature of the stress. These odds between the experimental data can be explained assuming a strong stress field located in the substrate and related to defects generated in the silicon during the growth process.

Selective arrangement of vesicles on artificial lipid membrane by biotin-avidin interaction

2021 ◽  
Author(s):  
Kai Hashino ◽  
Daiya Mombayashi ◽  
Yuto Nakatani ◽  
Azusa Oshima ◽  
Masumi Yamaguchi ◽  
...  
Keyword(s):  
Lipid Bilayer ◽  
Lipid Bilayers ◽  
Liquid Crystalline ◽  
Lipid Membrane ◽  
Unsaturated Lipid ◽  
Si Substrates ◽  
Phase Domain ◽  
Unsaturated Lipids ◽  
Lipid Mixtures ◽  
The Difference

Abstract Lipid bilayers suspended over microwells on Si substrates are promising platforms for nanobiodevices that mimic cell membranes. Using the biotin-avidin interaction, we have succeeded in selectively arranging vesicles on the freestanding region of a lipid bilayer. When ternary lipid mixtures of saturated lipid, unsaturated lipid, and cholesterol are used, they separate into liquid-order (Lo) and liquid-crystalline (Lα) domains. A freestanding lipid bilayer prefers the Lα-phase over the Lo-phase because of the difference in their flexibility. In addition, the type of biotinylated lipid determines whether it is localized in the Lα-phase domain or the Lo-phase domain. As a result, the biotinylated unsaturated lipids localized in the Lα-phase domain aggregate in the freestanding lipid bilayer, and vesicles labeled with biotin selectively bind to the freestanding lipid bilayer by the biotin-avidin interaction. This technique helps to introduce biomolecules into the freestanding lipid bilayer of nanobiodevices via vesicles.

scholarly journals Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 143-146 ◽  
Author(s):  
Ruggero Anzalone ◽  
Christopher Locke ◽  
J. Carballo ◽  
Nicolò Piluso ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Residual Stress ◽  
Growth Rate ◽  
Growth Process ◽  
Film Growth ◽  
Xrd Analysis ◽  
Fundamental Parameter ◽  
Si Substrates ◽  
Average Residual ◽  
Hydrogen Carrier ◽  
The Impact

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as the C and Si precursors in hydrogen carrier gas. The film thickness was held constant at ~2.5 µm independent of the growth rate so as to allow for direct films comparison as a function of the growth rate. Supported by profilometry, Raman and XRD analysis, this study shows that the growth rate is a fundamental parameter for low-defect and low-stress hetero-epitaxial growth process of 3C-SiC on Si substrates. XRD (rocking curve analysis) and Raman spectroscopy show that the crystal quality of the films increases with decreasing growth rate. From curvature measurements, the average residual stress within the layer using the modified Stoney’s equation was calculated. The results show that the films are under compressive stress and the calculated residual stress also increases with growth rate, from -0.78 GPa to -1.11 GPa for 3C-SiC films grown at 2.45 and 4 µm/h, respectively.

Niobate Films for Microwave Applications

2001 ◽  
Vol 666 ◽  
Author(s):  
C.-R. Cho ◽  
J.-H. Koh ◽  
A.M. Grishin ◽  
S. Abadei ◽  
S. Gevorgian
Keyword(s):  
Dielectric Loss ◽  
Dielectric Permittivity ◽  
Pulsed Laser ◽  
Microwave Spectroscopy ◽  
Growth Mechanisms ◽  
Si Substrates ◽  
Device Applications ◽  
Microwave Applications ◽  
Maximum Electric Field ◽  
Spectroscopy Studies

ABSTRACTSubmicron thick niobate films, Na0.5K0.5NbO3 (NKN) and Ag0.9Ta0.42Nb0.58O3-δ (ATN), have been pulsed laser deposited on MgO, Pt80Ir20, and Si substrates for microwave device applications. Strong bi-axial (001)-(011) texture observed in both films on MgO substrates indicates that there are major similarities in the growth mechanisms in these films. The dielectric permittivity ε′ of NKN film increases monotonously with temperature, while that of ATN shows a weak temperature dependence (about 21% of variation) in a wide temperature range from 77 K to 400 K. Measured tunability Δε′/ε′ and dielectric loss tanδ for niobate/MgO interdigital capacitors have been found to be (Δε′/ε′)NKN = 40%, tanδNKN = 1.4-2.3% and (Δε′/ε′)ATN = 4.3%, tanδATN = 0.23-0.25% at 1 MHz under maximum electric field of 100 kV/cm. Microwave spectroscopy studies for NKN/Si varactors show (Δε′/ε′)NKN/Si of 13% and tanδNKN/Si = 1.2-6.6% at 40 GHz @ 200 kV/cm.

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