Analysis of Electrostatic Potentials in Compound Semiconductors and Laser Diode by using Phase Related Techniques

2021 ◽  
Author(s):  
Hirokazu Sasaki ◽  
Keyword(s):  
Laser Diode ◽  
Compound Semiconductors ◽  
Electrostatic Potentials

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Degradation Analysis and Degradation Suppression Technology Caused by Light Absorption at Active Layer Facet of GaInAsP Laser Diode

2008 ◽  
Vol 128 (5) ◽  
pp. 732-737
Author(s):  
Hiroyuki Ichikawa ◽  
Masashi Ito ◽  
Chie Fukuda ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
...  
Keyword(s):  
Active Layer ◽  
Laser Diode ◽  
Light Absorption ◽  
Degradation Analysis

Development of the Terahertz Inspection Technology using Multimode Laser Diode

2013 ◽  
Vol 133 (8) ◽  
pp. 430-435 ◽  
Author(s):  
Tohru Takanaka ◽  
Hiroyuki Nishikawa ◽  
Yoshito Sameda ◽  
Keiji Yamamoto
Keyword(s):  
Laser Diode ◽  
Multimode Laser ◽  
Multimode Laser Diode
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