Development of laser diode layers based upon III-V compound semiconductors in the wavelength range from 0.7μm to 0.9μm

2006 ◽  
Author(s):  
D. Garg ◽  
N. Gupta ◽  
N.R. Yadav
Keyword(s):  
Wavelength Range ◽  
Laser Diode ◽  
Compound Semiconductors

Long-wavelength-range laser diode using GaInNAs

1997 ◽  
Author(s):  
Masahiko Kondow ◽  
Shin'ichi Nakatsuka ◽  
Takeshi Kitatani ◽  
Yoshiaki Yazawa ◽  
Makoto O. Okai
Keyword(s):  
Wavelength Range ◽  
Laser Diode ◽  
Long Wavelength

scholarly journals CHARACTERIZATION AND MODELING OF SOLITON TRANSMISSION AT 2.5 GB/S OVER 200 KM

2010 ◽  
Vol 7 (2) ◽  
pp. 61-70
Author(s):  
KHALID A. S. AL-KHATEEB ◽  
MOHD ARMI ARMI ◽  
MOHAMAD SHAWAL
Keyword(s):  
Wavelength Range ◽  
Laser Diode ◽  
Communication System ◽  
Real Data ◽  
Soliton Transmission ◽  
Mode Locked Laser

Soliton characteristics and soliton transmission have been simulated using a VPI simulator. Simulation was also used to construct and study a soliton communication system. Near soliton pulses emitted by an actively mode-locked laser is then compressed in a dispersion-compensating fiber (DCF) to produce solitons. The effects of non-linearity and active pre-chirping of mode-locked laser diode sources were also investigated. Assessment on a modeled system using real data shows that propagation over 250 km at 2.5 Gb/s in standard fibers with 20 ps pulse widths is possible in the 1550 nm wavelength range.

scholarly journals Milliwatt-Level Spontaneous Emission Across the 3.5–8 µm Spectral Region from Pr3+ Doped Selenide Chalcogenide Fiber Pumped with a Laser Diode

2020 ◽  
Vol 10 (2) ◽  
pp. 539 ◽  
Author(s):  
Lukasz Sojka ◽  
Zhuoqi Tang ◽  
Dinuka Jayasuriya ◽  
Meili Shen ◽  
Joel Nunes ◽  
...  
Keyword(s):  
Environmental Monitoring ◽  
Spontaneous Emission ◽  
Wavelength Range ◽  
Laser Diode ◽  
Spectral Region ◽  
Laser Diodes ◽  
Molecular Sensing ◽  
Mid Infrared ◽  
Sensing Applications ◽  
First Time

A spontaneous emission fiber source operating in the mid-infrared (MIR) wavelength range from 3.5 to 8 µm is demonstrated for the first time at output power levels of at least 1 mW. The source is a Pr3+-doped selenide chalcogenide, multimode, glass fiber pumped with commercially available laser diodes operating at 1.470 µm, 1.511 µm and 1.690 µm. This MIR spontaneous emission fiber source offers a viable alternative to broadband mid-infrared supercontinuum fiber sources, which are comparatively complex and costly. The MIR emission wavelength range is significant for molecular sensing applications across biology and chemistry, and in medicine, agriculture, defense, and environmental monitoring.

New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth

1996 ◽  
Vol 35 (Part 2, No. 7B) ◽  
pp. L876-L879 ◽  
Author(s):  
Hajime Asahi ◽  
Kazuhiko Yamamoto ◽  
Kakuya Iwata ◽  
Shun-ichi Gonda ◽  
Kunishige Oe
Keyword(s):  
Wavelength Range ◽  
Laser Diodes ◽  
Compound Semiconductors

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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