scholarly journals Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period

2016 ◽  
Vol 29 (1) ◽  
pp. 1-10
Author(s):  
Hong Long ◽  
Mark Sweet ◽  
Sankara Narayanan
Keyword(s):  
Numerical Evaluation ◽  
Load Condition ◽  
Operating Conditions ◽  
Current Gain ◽  
Power Devices ◽  
Inductive Load ◽  
Dynamic Voltage ◽  
Voltage Clamping ◽  
Safe Operating ◽  
Off Time

One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.

scholarly journals A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

Energies ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 4160
Author(s):  
Xiaobin Li ◽  
Hongbo Ma ◽  
Junhong Yi ◽  
Song Lu ◽  
Jianping Xu
Keyword(s):  
Comparative Analysis ◽  
Power Density ◽  
Load Condition ◽  
High Electron ◽  
Power Devices ◽  
Voltage Range ◽  
Gan Hemt ◽  
Active Clamp ◽  
Forward Converters ◽  
Bus Voltage

Compared with conventional forward converters, active clamp forward (ACF) converters have many advantages, including lower voltage stress on the primary power devices, the ability to switch at zero voltage, reduced EMI and duty cycle operation above 50%. Thus, it has been the most popular solution for the low bus voltage applications, such as 48 V and 28 V. However, because of the poor performance of Si MOSFETs, the efficiency of active clamp forward converters is difficult to further improved. Focusing on the bus voltage of 28 V with 18~36 V voltage range application, the Gallium Nitride high electron-mobility transistors (GaN HEMT) with ultralow on-resistance, low parasitic capacitances, and no reverse recovery, is incorporated into active clamp forward converters for achieving higher efficiency and power density, in this paper. Meanwhile, the comparative analysis is performed for Si MOSFET and GaN HEMT. In order to demonstrate the feasibility and validity of the proposed solution and comparative analysis, two 18~36 V input, 120 W/12 V output, synchronous rectification prototype with different power devices are built and compared in the lab. The experimental results show the GaN version can achieve the efficiency of 95.45%, which is around 1% higher than its counterpart under the whole load condition and the same power density of 2.2 W/cm3.

scholarly journals On the Lifetime Estimation of SiC Power MOSFETs for Motor Drive Applications

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 324
Author(s):  
Carmelo Barbagallo ◽  
Santi Agatino Rizzo ◽  
Giacomo Scelba ◽  
Giuseppe Scarcella ◽  
Mario Cacciato
Keyword(s):  
Electric Drive ◽  
Average Power ◽  
Estimation Procedure ◽  
General Purpose ◽  
Operating Conditions ◽  
Power Losses ◽  
Power Devices ◽  
Lifetime Estimation ◽  
Power Mosfets ◽  
Mission Profile

This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner’s rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology.

Recent Advances in Lower Bound Shakedown Analysis

2009 ◽  
Author(s):  
Dieter Weichert ◽  
Abdelkader Hachemi
Keyword(s):  
Finite Element ◽  
Lower Bound ◽  
Process Engineering ◽  
Operating Conditions ◽  
Structural Elements ◽  
Shakedown Analysis ◽  
Material Models ◽  
Practical Engineering ◽  
Safe Operating ◽  
New Algorithms

The special interest in lower bound shakedown analysis is that it provides, at least in principle, safe operating conditions for sensitive structures or structural elements under fluctuating thermo-mechanical loading as to be found in power- and process engineering. In this paper achievements obtained over the last years to introduce more sophisticated material models into the framework of shakedown analysis are developed. Also new algorithms will be presented that allow using the addressed numerical methods as post-processor for commercial finite element codes. Examples from practical engineering will illustrate the potential of the methodology.

Effects of Cycle Operating Conditions on Combustor Performance

1997 ◽  
Vol 119 (1) ◽  
pp. 45-49 ◽  
Author(s):  
N. T. Davis ◽  
V. G. McDonell ◽  
G. S. Samuelsen
Keyword(s):  
Cost Function ◽  
Duty Cycle ◽  
Load Condition ◽  
Combustion Efficiency ◽  
Operating Conditions ◽  
Nox Emissions ◽  
Variable Geometry ◽  
Oxides Of Nitrogen ◽  
Mixing Processes ◽  
The Cost

To mitigate the environmental impact of next-generation gas turbine combustors, the emission performance at each condition throughout the load duty cycle must be optimized. Achieving this with a single combustor geometry may not be possible. Rather, the mixing processes and airflow splits must likely be modified as a function of load in order to (1) abate the emission of oxides of nitrogen, (2) maintain combustion efficiency, and (3) preclude lean blow-out over the entire duty cycle. The present study employs a model combustor to evaluate combustor performance as a function of load and explore the application of variable geometry to optimize performance at each condition. A parametric variation of flow splits is conducted at each load condition by independently adjusting the primary jet area and swirler choke area. The resultant impact on combustor performance is measured and quantified in terms of a cost function. The cost function is defined to increase with improving combustor performance (e.g., improving combustion efficiency and/or declining NOx emissions). Cycle operating conditions are found to alter the response mappings of efficiency and NOx. As a result, the optimal configuration of the combustor changes as the load is varied over the duty cycle. The results provide guidance on the application of active control.

scholarly journals Safe operating conditions for NSLS-II Storage Ring Frontends commissioning

2015 ◽  
Author(s):  
S. Seletskiy ◽  
C. Amundsen ◽  
K. Ha ◽  
A. Hussein
Keyword(s):  
Storage Ring ◽  
Operating Conditions ◽  
Safe Operating

Evaluation of SiC Stack Cascode for 200°C Operations

2014 ◽  
Vol 778-780 ◽  
pp. 879-882 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
John Hostetler ◽  
Anup Bhalla
Keyword(s):  
Dynamic Characteristics ◽  
Threshold Voltage ◽  
Load Condition ◽  
Experimental Results ◽  
Reliability Test ◽  
Inductive Load ◽  
Static And Dynamic Characteristics

This paper evaluates the static and dynamic characteristics of a 1.2kV SiC stack-cascode at junction temperatures (Tj) up to 200°C. The experimental results show that, at Tj = 200°C, the SiC stack-cascode can be switched stably under a 600V-17A inductive load condition and can withstand an avalanche current of 13A for 9μs (Eav = 116mJ) for a 1.5mH load inductor. The SiC stack-cascode has no degradation in on-resistance, threshold voltage and blocking characteristics after 80 hours HTRB reliability test at 200°C ambient. These promising experimental results indicate the possibility of the SiC stack-cascode for reliable 200°C operations.

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