scholarly journals Synthesis and characterization of mesoporous α-Fe2O3 nanoparticles and investigation of electrical properties of fabricated thick films

2016 ◽  
Vol 10 (4) ◽  
pp. 209-217 ◽  
Author(s):  
Ali Mirzaei ◽  
Kamal Janghorban ◽  
Babak Hashemi ◽  
Seyyed Hosseini ◽  
Maryam Bonyani ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Resistance ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Thick Films ◽  
Sol Gel ◽  
Complexing Agent ◽  
Fe2o3 Nanoparticles

In this work, ?-Fe2O3 nanoparticles (NPs) have been synthesized by using a simple Pechini sol-gel method from iron nitrate, citric acid as complexing agent and ethylene glycol as polymerization agent. The calcined ?-Fe2O3 NPs were fully characterized by different techniques. It was confirmed that ultrafine and highly crystalline ?-Fe2O3 NPs with high purity and mesoporous nature can be obtained after calcination at 550?C for 3 h. In addition, the results of electrical resistance measurements of the fabricated Fe2O3 thick films showed that ?-Fe2O3 thick films have stable electrical properties which are beneficial for electrical applications such as gas sensing and field effect transistors.

ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

2019 ◽  
Vol 125 (19) ◽  
pp. 195701 ◽  
Author(s):  
Kimihiko Kato ◽  
Hiroaki Matsui ◽  
Hitoshi Tabata ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Characterization ◽  
Tunneling Field Effect Transistors

scholarly journals Memory effects in black phosphorus field effect transistors

2D Materials ◽  
2021 ◽  
Author(s):  
Alessandro Grillo ◽  
Aniello Pelella ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Stephan Sleziona ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Methyl Methacrylate ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Transfer Characteristic ◽  
Black Phosphorus ◽  
Defect States

Abstract We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

Sol-gel preparation and characterization of transparent GdTaO 4 : Eu3+thick films

2008 ◽  
Author(s):  
Kun Han ◽  
Mu Gu ◽  
Xiaolin Liu ◽  
Chen Ni ◽  
Shiming Huang ◽  
...  
Keyword(s):  
Thick Films ◽  
Sol Gel ◽  
Gel Preparation
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