scholarly journals Ar, Xe Ion Bombardment Effects on Film Characteristics of Ni Thin Film during Sputter Deposition Process

2012 ◽  
Vol 76 (5) ◽  
pp. 355-358 ◽  
Author(s):  
Ami Kohri ◽  
Fumihiko Hayashida ◽  
Yoshiaki Shinohara ◽  
Yoshihito Matsumura
Keyword(s):  
Thin Film ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Film Characteristics

scholarly journals Ion Bombardment Effects on Internal Stress of Ni Thin Film during Sputter Deposition Process

2014 ◽  
Vol 78 (3) ◽  
pp. 132-136 ◽  
Author(s):  
Ryoichi Toyoda ◽  
Soichiro Toya ◽  
Maki Hashimoto ◽  
Ami Kohri ◽  
Yoshihito Matsumura
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Sputter Deposition

Microstructural observation of a composite film of c-BN and h-BN phases

2000 ◽  
Vol 15 (11) ◽  
pp. 2292-2295 ◽  
Author(s):  
Young-Joon Park ◽  
Young-Joon Baik ◽  
Jae Hyoung Choi ◽  
Jeong Yong Lee ◽  
Jun-Hee Hahn
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composite Film ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Microstructural Observation ◽  
Ion Beam Assisted Deposition

BN films consisting of c-BN and h-BN phases were synthesized using an ion-beam-assisted deposition process. In contrast to conventional observations, the c-BN and h-BN phases did not form separate layers, but were distributed in the form of nano-sized grains throughout the film thickness. No distinctly aligned h-BN layer was observed before the c-BN phase. Such a mixed character of the film was attributed to a localized ion bombardment effect instead of the macro-stress. Possibly because of the presence of scattered h-BN phases, the thin film described here possessed a low hardness of about 20 GPa and a low stress of about 5 GPa, compared with other reported c-BN-containing films.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Thin Film Characteristics and FET Performances of β-Octyl-substituted Long Oligothiophenes

2006 ◽  
Vol 35 (8) ◽  
pp. 942-943 ◽  
Author(s):  
Kazuo Takimiya ◽  
Katsuhiro Sakamoto ◽  
Tetsuo Otsubo ◽  
Yoshihito Kunugi
Keyword(s):  
Thin Film ◽  
Film Characteristics

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

2002 ◽  
Vol 407 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
Shin-ichi Aoqui ◽  
Hisatomo Miyata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Excimer Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Krf Excimer Laser

Sputter Deposition of Fe-Co Nitride for Ferromagnetic Granular Nitride Thin Film

2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Thermal Decomposition ◽  
Sputter Deposition ◽  
Composite Target ◽  
Zinc Blende ◽  
Alloy Particles ◽  
Sputter Deposited ◽  
Magneto Resistance ◽  
Zinc Blende Structure

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.

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