Laser Light Scattering in Biomedical Diagnostics and Therapy

1993 ◽  
Vol 5 (2) ◽  
pp. 43-60 ◽  
Author(s):  
Valery V. Tuchin
1993 ◽  
Author(s):  
Valery V. Tuchin ◽  
Sergey S. Ulyanov ◽  
Sergei R. Utz ◽  
Ilya V. Yaroslavsky

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.


Sign in / Sign up

Export Citation Format

Share Document