A line of 4–40 GHz GaAs low noise medium power amplifiers for SDH relay stations

2018 ◽  
Author(s):  
Oleg Bondarev ◽  
Denis Mirvoda ◽  
Alexey Kosogor ◽  
Yuri Tikhov
Keyword(s):  
Power Amplifiers ◽  
Low Noise ◽  
Relay Stations

Low-Noise Isolated Digital Shunt for Precision Class-D Power Amplifiers

2018 ◽  
Vol 33 (3) ◽  
pp. 1907-1910 ◽  
Author(s):  
Mario Mauerer ◽  
Arda Tuysuz ◽  
Johann Walter Kolar
Keyword(s):  
Power Amplifiers ◽  
Low Noise ◽  
Precision Class ◽  
Class D

V-band GaAs MMIC low-noise and power amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1966-1975 ◽  
Author(s):  
Hing-Loi Hung ◽  
G.M. Hegazi ◽  
T.T. Lee ◽  
F.R. Phelleps ◽  
J.L. Singer ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Low Noise ◽  
V Band

scholarly journals Performance of Efficient CMOS Power Amplifier for ISM Band Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 4579-4584
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
State Of The Art ◽  
Low Noise ◽  
High Output Power ◽  
Ism Band ◽  
Functional Blocks ◽  
Noise Amplifier ◽  
High Output

Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.

scholarly journals Development of X-Band Transceiver MMIC’s Using GaN Technology

2019 ◽  
Vol 8 (2) ◽  
pp. 1-9
Author(s):  
O. Memioglu ◽  
O. Kazan ◽  
A. Karakuzulu ◽  
I. Turan ◽  
A. Gundel ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Rf Power ◽  
Rf Switch ◽  
X Band ◽  
Measurement Results ◽  
Noise Amplifier ◽  
Selection Of

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

2010 ◽  
Vol 2 (1) ◽  
pp. 105-114 ◽  
Author(s):  
Stéphane Piotrowicz ◽  
Erwan Morvan ◽  
Raphaël Aubry ◽  
Guillaume Callet ◽  
Eric Chartier ◽  
...  
Keyword(s):  
High Power ◽  
Power Amplifiers ◽  
Process Development ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Gate Length ◽  
Gan Hemt ◽  
Power Switches ◽  
Operation Results ◽  
Ku Band

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

GaN-based amplifiers for wideband applications

2010 ◽  
Vol 2 (1) ◽  
pp. 135-141 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber ◽  
Kristina Widmer ◽  
Martin Oppermann ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Amplifiers ◽  
Building Blocks ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Electronic Warfare ◽  
Monolithically Integrated ◽  
Gan Hemt ◽  
System Approaches ◽  
Lower Frequencies

Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.

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