Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged, and analyzed to reconstruct the GDSII design file and verify a 100% match to the golden GDSII design. This work leveraged previous developments in each stage of the front half of the cooperative Verification and Validation (V&V) workflow combined with new techniques and processes developed for processing 3D architecture FET devices. We have demonstrated the critical first step to performing a full V&V workflow on an advanced technology node device, starting from the fabricated silicon device to the design extraction. The process development knowledge gained while reaching this milestone will further accelerate future advancements toward providing trusted advanced technology node devices in a timely manner. <br>

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OBIRCH Driven Failure Analysis for Process Development of 120 nm to 65 nm Technology Nodes

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0447 ◽

2004 ◽

Author(s):

R. Ross ◽

K. Ly ◽

M. de la Bardonnie ◽

L.F.Tz. Kwakman ◽

F. Lorut ◽

...

Keyword(s):

Failure Analysis ◽

Process Development ◽

Advanced Technology ◽

Manufacturing Processes ◽

Critical Dimensions ◽

Technology Node ◽

Development Failure ◽

Fault Characterization ◽

Technology Nodes

Abstract Given the ever increasing complexity of conducting failure analysis on today's latest generation manufacturing processes, the authors have investigated and implemented OBIRCH techniques into process development failure analysis practices. They describe their applications of OBIRCH to 120, 90, and 65 nm samples and their methods for interpreting the results. The OBIRCH technique has the ability to address faults within most structure types and quickly give information on a number of failing sites. It has proven itself as a necessary tool for failure analysis at advanced technology nodes, where fault characterization is getting difficult due to extremely small critical dimensions. The results obtained using the OBIRCH tool have been excellent on 120nm and initial 90nm results. The authors have not yet analyzed enough 65nm samples to form any type of conclusion regarding the tools ability at this technology node.

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TSV front end design, integration, and process development

2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) ◽

10.23919/mipro.2017.7966603 ◽

2017 ◽

Author(s):

Mike Thomason ◽

Gordy Girvna

Keyword(s):

Process Development ◽

Front End ◽

Design Integration

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Root Cause Analysis for Pin Leakage

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0217 ◽

2016 ◽

Author(s):

Zhigang Song ◽

Jochonia Nxumalo ◽

Manuel Villalobos ◽

Sweta Pendyala

Keyword(s):

Failure Analysis ◽

Root Cause Analysis ◽

Advanced Technology ◽

Process Step ◽

Cause Analysis ◽

Hard Mask ◽

Technology Node ◽

Root Cause ◽

Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

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Approaching the 35 nm technology node: technical requirements and key challenges in front-end processing

10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295) ◽

10.1109/asmc.1999.798260 ◽

2003 ◽

Author(s):

R. Cleavelin

Keyword(s):

Technology Node ◽

Technical Requirements ◽

Front End

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Image-based overlay mark shrinkage study for advanced technology node

2016 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic.2016.7464064 ◽

2016 ◽

Author(s):

Nan-Nan Zhang ◽

Man-Hua Shen ◽

Yi-Shih Lin

Keyword(s):

Advanced Technology ◽

Technology Node

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Customer Engagement by Fashion Brands

Circular Economy and Re-Commerce in the Fashion Industry - Advances in Finance, Accounting, and Economics ◽

10.4018/978-1-7998-2728-3.ch013 ◽

2020 ◽

pp. 161-175

Author(s):

Samala Nagaraj

Keyword(s):

Marketing Strategies ◽

Advanced Technology ◽

Customer Engagement ◽

New Techniques ◽

Engagement Strategies ◽

The World ◽

Advanced Analytics

No matter what changes time and technology bring to the world, fashion has its own way of adaptation. In the present times dominated by advanced technology and information, fashion enthusiasts, marketers, and industry are facing challenges and learning to adapt the new. With the increased options of selecting favorite fashion brands through largely available channels and information, fashion customers are equipped today with greater flexibility and understanding; this challenges brands to retain customers. Marketers are using new ways and platforms to engage customers. The chapter focuses on the effective marketing strategies adopted by fashion brands to engage customers. The chapter elaborately discusses the latest technologies and platforms used to engage customers. The chapter attempts to exemplify the effective engagement strategies followed by some of the successful fashion brands. It discusses new techniques in engaging like gamification and the use of advanced analytics for evaluation.

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