Artificial chirality evolution in micro-/nano-scale three-dimensional plasmonic metamaterials

Author(s):  
Junsuk Rho
2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Susumu Kuwabata ◽  
Hiro Minamimoto ◽  
Kosuke Inoue ◽  
Akihito Imanishi ◽  
Ken Hosoya ◽  
...  

2008 ◽  
Vol 612 ◽  
pp. 153-200 ◽  
Author(s):  
ROBERTO CAMASSA ◽  
TERRY JO LEITERMAN ◽  
RICHARD M. MCLAUGHLIN

An exact mathematical solution for the low-Reynolds-number quasi-steady hydrodynamic motion induced by a rod in the form of a prolate spheroid sweeping a symmetric double cone is developed, and the influence of the ensuing fluid motion upon passive particles is studied. The resulting fluid motion is fully three-dimensional and time varying. The advected particles are observed to admit slow orbits around the rotating rods and a fast epicyclic motion roughly commensurate with the rod rotation rate. The epicycle amplitudes, vertical fluctuations, arclengths and angle travelled per rotation are mapped as functions of their initial coordinates and rod geometry. These trajectories exhibit a rich spatial structure with greatly varying trajectory properties. Laboratory frame asymmetries of these properties are explored using integer time Poincaré sections and far-field asymptotic analysis. This includes finding a small cone angle invariant in the limit of large spherical radius whereas an invariant for arbitrary cone angles is obtained in the limit of large cylindrical radius. The Eulerian and Lagrangian flow properties of the fluid flow are studied and shown to exhibit complex structures in both space and time. In particular, spatial regions of high speed and Lagrangian velocities possessing multiple extrema per rod rotation are observed. We establish the origin of these complexities via an auxiliary flow in a rotating frame, which provides a generator that defines the epicycles. Finally, an additional spin around the major spheroidal axis is included in the exact hydrodynamic solution resulting in enhanced vertical spatial fluctuation as compared to the spinless counterpart. The connection and relevance of these observations with recent developments in nano-scale fluidics is discussed, where similar epicycle behaviour has been observed. The present study is of direct use to nano-scale actuated fluidics.


2005 ◽  
Vol 475-479 ◽  
pp. 357-360 ◽  
Author(s):  
Shoichi Hirosawa ◽  
Tatsuo Sato

The formation of nano-scale clusters (nanoclusters) prior to the precipitation of the strengthening b” phase significantly influences two-step aging behavior of Al-Mg-Si alloys. In this work, the existence of two kinds of nanoclusters has been verified in the early stage of phase decomposition by differential scanning calorimetry (DSC) and three-dimensional atom probe (3DAP). Pre-aging treatment at 373K before natural aging was also found to form preferentially one of the two nanoclusters, resulting in the remarkable restoration of age-hardenability at paint-bake temperatures. Such microstructural control by means of optimized heat-treatments; i.e. nanocluster assist processing (NCAP), possesses great potential for enabling Al-Mg-Si alloys to be used more widely as a body-sheet material of automobiles.


2005 ◽  
Vol 902 ◽  
Author(s):  
Yasuo Cho ◽  
Tomoyuki Sugihara

AbstractThree-dimensional domain configuration of multi-domain LiTaO3 is revealed by Scanning Nonlinear Dielectric Microscopy (SNDM). SNDM can measure the polarization components both perpendicular and parallel to the surface of the specimen. These techniques are applied to the both congruent and stoichiometric LiTaO3 crystals. The images obtained by SNDM measurements allow us to confirm the various domain features of LiTaO3 and to understand both similarities and differences between the congruent and stoichiometric compositions.


2019 ◽  
Author(s):  
Raja N Mir

The Multi Gate transistors (MGT) have been used to improve the transistor device performance at the nanometer scales. MGTs alleviate many problems in the planar devices due to tighter control of the gate on the channel. In this paper the change in the Fin Architecture and Gate Length of the MOS device, is correlated with the Subthreshold Slope (SS) and ON/OFF current ratio. The study is done by conducting experiments and three-dimensional simulations.


2011 ◽  
Vol 67 (a1) ◽  
pp. C92-C92
Author(s):  
C. Song ◽  
J. Park ◽  
S. Kim ◽  
D. Nam ◽  
Y. Kohmura ◽  
...  

2014 ◽  
Vol 31 (12) ◽  
pp. 1101-1106 ◽  
Author(s):  
Ki-Hwan Jang ◽  
Hyun-Taek Lee ◽  
Chung-Soo Kim ◽  
Won-Shik Chu ◽  
Sung-Hoon Ahn

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